Get started
Author

Wayne J. Johnson

Observed names: Johnson, Wayne, W. J. Johnson, W. Johnson, W.J. Johnson, Wayne Johnson
Observed institutions: Ford Motor Company (United States), Kopin Corporation (United States), IQE (United Kingdom), University of Florida, Tennessee Technological University, University of Maryland, College Park, Auburn University
OpenAlex ID: A5083247739
1.9-kV AlGaN/GaN Lateral Schottky Barrier Diodes on Silicon
2015 · Mingda Zhu, Bo Song, et al. · IEEE Electron Device Letters · 194
PDF
210-GHz InAlN/GaN HEMTs With Dielectric-Free Passivation
2011 · Ronghua Wang, Guowang Li, et al. · IEEE Electron Device Letters · 101
Thermal Boundary Resistance in GaN Films Measured by Time Domain Thermoreflectance with Robust Monte Carlo Uncertainty Estimation
2016 · Thomas L. Bougher, Luke Yates, et al. · Nanoscale and Microscale Thermophysical Engineering · 92
220-GHz Quaternary Barrier InAlGaN/AlN/GaN HEMTs
2011 · Ronghua Wang, Guowang Li, et al. · IEEE Electron Device Letters · 92
Fast electrical detection of Hg(II) ions with AlGaN∕GaN high electron mobility transistors
2007 · Hung-Ta Wang, B. S. Kang, et al. · Applied Physics Letters · 91
Quaternary Barrier InAlGaN HEMTs With $f_{T}/f_{\max}$ of 230/300 GHz
2013 · Ronghua Wang, Guowang Li, et al. · IEEE Electron Device Letters · 83
InGaN channel high electron mobility transistor structures grown by metal organic chemical vapor deposition
2012 · O. Laboutin, Y. Cao, et al. · Applied Physics Letters · 47
InGaN Channel High-Electron-Mobility Transistors with InAlGaN Barrier andfT/fmaxof 260/220 GHz
2013 · Ronghua Wang, Guowang Li, et al. · Applied Physics Express · 46
PDF
Impact of $\hbox{Al}_{2}\hbox{O}_{3}$ Passivation Thickness in Highly Scaled GaN HEMTs
2012 · Dong Seup Lee, Oleg Laboutin, et al. · IEEE Electron Device Letters · 46
Silicon carbide integrated circuits for extreme environments
2013 · Avinash S. Kashyap, Cheng-Po Chen, et al. · IEEE Workshop on Wide Bandgap Power Devices and Applications · 39
Advantages and limitations of MgO as a dielectric for GaN
2003 · B.P. Gila, J. Kim, et al. · Solid-State Electronics · 35
Effect of source field plate on the characteristics of off-state, step-stressed AlGaN/GaN high electron mobility transistors
2011 · Lu Liu, Tsung Sheng Kang, et al. · Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · 32
317 GHz InAlGaN/GaN HEMTs with extremely low on‐resistance
2013 · Dong Seup Lee, Oleg Laboutin, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 26
Improvement of Off-State Stress Critical Voltage by Using Pt-Gated AlGaN/GaN High Electron Mobility Transistors
2011 · Chien-Fong Lo, Lu Liu, et al. · Electrochemical and Solid-State Letters · 23
PDF
Piezoelectric polarization-induced two dimensional electron gases in AlGaN/GaN heteroepitaxial structures: Application for micro-pressure sensors
2005 · S.N.G. Chu, F. Ren, et al. · Materials Science and Engineering A · 23
Optically active vacancies in GaN grown on Si substrates probed using a monoenergetic positron beam
2014 · Akira Uedono, Tatsuya Fujishima, et al. · Applied Physics Letters · 22
GaN HEMT Technology
2011 · Wayne Johnson, Edwin L. Piner · Springer series in materials science · 15
Si-Containing Recessed Ohmic Contacts and 210 GHz Quaternary Barrier InAlGaN High-Electron-Mobility Transistors
2011 · Ronghua Wang, Guowang Li, et al. · Applied Physics Express · 15
The Composition of Ga[sub 1−x]Al[sub x]As Grown from Ga-Rich Solutions as a Function of Growth Temperature and Solution Composition
1972 · W. G. Rado, W. J. Johnson, et al. · Journal of The Electrochemical Society · 12
PDF
Annealing behaviors of vacancy-type defects near interfaces between metal contacts and GaN probed using a monoenergetic positron beam
2014 · Akira Uedono, Tatsuya Fujishima, et al. · Applied Physics Letters · 11
PDF
Dispersion-free operation in InAlN-based HEMTs with ultrathin or no passivation
2013 · Ronghua Wang, G. Li, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 11
Distributed polarization-doped GaN p–n diodes with near-unity ideality factor and avalanche breakdown voltage of 1.25 kV
2022 · Kazuki Nomoto, Wenshen Li, et al. · Applied Physics Letters · 10
Coplanar waveguide performance comparison of GaN-on-Si and GaN-on-SiC substrates
2017 · Lina Cao, Chien-Fong Lo, et al. · Technical digest -- IEEE Compound Semiconductor Integrated Circuit Symposium · 8
Vacancy clusters introduced by CF4-based plasma treatment in GaN probed with a monoenergetic positron beam
2014 · Akira Uedono, Nakaaki Yoshihara, et al. · Applied Physics Express · 8
PDF
GaN-on-Si HEMTs: From Device Technology to Product Insertion
2008 · Wayne Johnson, Sameer Singhal, et al. · MRS Proceedings · 7
Works count: 58
Citation count: 1,135
H-index: 16
I10-index: 22
Year
Topic
Type