Work

Quaternary Barrier InAlGaN HEMTs With $f_{T}/f_{\max}$ of 230/300 GHz

Year: 2013

Type: article

Source: IEEE Electron Device Letters

DOI: 10.1109/led.2013.2238503

Authors: Ronghua Wang, Guowang Li, Golnaz Karbasian, Jia Guo, Bo Song, Yuanzheng Yue, Zongyang Hu, Oleg Laboutin, Yu Cao, Wayne Johnson, Gregory Snider, Patrick Fay, Debdeep Jena, Huili Grace Xing

Institutions: University of Notre Dame, Kopin Corporation (United States)

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funder: Air Force Office of Scientific Research

OpenAlex ID: W1893065166

FWCI: 2.867

Cites: 15

Cited by: 83

Related to: 10