Author

H. Leier

Observed names: H Leier, Helmut Leier, Leier, H., Leier, Helmut

Observed institutions: University of Stuttgart, Deutsche Bundespost, École Nationale Supérieure de l'Électronique et de ses Applications, Daimler (Germany)

OpenAlex ID: A5083308120

Dimensionality dependence of the band-gap renormalization in two- and three-dimensional electron-hole plasmas in GaAs

1987 · G. Tränkle, H. Leier, et al. · Physical Review Letters · 251

Current instabilities in GaN-based devices

2001 · I. Daumiller, D. Theron, et al. · IEEE Electron Device Letters · 152

Heat-spreading diamond films for GaN-based high-power transistor devices

2001 · M. Seelmann-Eggebert, P. Meisen, et al. · Diamond and Related Materials · 86

Mass and dose dependence of ion-implantation-induced intermixing of GaAs/GaAlAs quantum-well structures

1990 · H. Leier, A. Forchel, et al. · Journal of Applied Physics · 68

AlGaN/GaN HEMTs on Si(111) with 6.6 W/mm output power density

2003 · R. Behtash, H. Tobler, et al. · Electronics Letters · 62

Carrier capture in intermixed quantum wires with sharp lateral confinement

1990 · H. Leier, A. Forchel, et al. · Applied Physics Letters · 52

Small signal and power measurements of AlGaN/GaNHEMTwith SiN passivation

2001 · Jong-Soo Lee, A. Vescan, et al. · Electronics Letters · 47

20W GaN HPAs for Next Generation X-Band T/R-Modules

2006 · P. Schuh, R. Leberer, et al. · IEEE MTT-S International Microwave Symposium digest · 32

A Compact 24 GHz Sensor for Beam-Forming and Imaging

2006 · Winfried Mayer, Arnold Gronau, et al. · International Conference on Control, Automation, Robotics and Vision (ICARCV) · 28

Fabrication and optical spectroscopy of ultra small III–V compound semiconductor structures

2007 · Alfred Forchel, Helmut Leier, et al. · Advances in Solid State Physics · 24

Transport and optical properties of semiconductor quantum wires

1991 · A. Forchel, A. Menschig, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 24

Subpicosecond characterization of carrier transport in GaAs-metal-semiconductor-metal photodiodes

1991 · M. Lambsdorff, M. Klingenstein, et al. · Applied Physics Letters · 23

Current limitation after pinch-off in AlGaN/GaN FETs

2000 · R. Dietrich, A. Wieszt, et al. · MRS Internet Journal of Nitride Semiconductor Research · 22

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Carrier relaxation in intermixed GaAs/ Alx Ga1−x As quantum wires

1993 · G. Mayer, F. E. Prins, et al. · Physical review. B, Condensed matter · 22

Direct extraction of linear HBT-model parameters using nine analytical expression blocks

2002 · A. Ouslimani, J. Gaubert, et al. · IEEE Transactions on Microwave Theory and Techniques · 21

Coplanar AlGaN/GaN HEMT power amplifier MMIC at X-band

2004 · R. Behtash, H. Tobler, et al. · IEEE MTT-S International Microwave Symposium digest · 20

35-40 GHz monolithic VCOs utilizing high-speed GaInP/GaAs HBTs

1994 · K. Riepe, H. Leier, et al. · IEEE Microwave and Guided Wave Letters · 19

Ka-band monolithic VCOs for low noise applications using GaInP/GaAs HBTs

2002 · U. Guttich, J.M. Dieudonne, et al. · IEEE Microwave and Millimeter-Wave Monolithic Circuits Symposium (MMWMC) · 17

High speed selfaligned GaInP/GaAs HBBTs

1993 · H. Leier, A. Marten, et al. · Electronics Letters · 17

Impact ionization avalanche breakdown in short crystal regions of p-Ge

1990 · W. Clauss, U. Rau, et al. · Journal of Applied Physics · 17

AlGaN/GaN MODFETs on semi-insulating SiC with 3W/mm at 20 GHz

2000 · A. Vescan, R. Dietrich, et al. · Electronics Letters · 16

Architecture and interconnect technologies for a novel conformal active phased array radar module

2003 · M. Schreiner, H. Leier, et al. · IEEE MTT-S International Microwave Symposium digest · 15

Optical properties of thermally interdiffused MBE-grown GaAs/GaAlAs quantum wells

1989 · H. Leier, H. Rothfritz, et al. · Journal of Crystal Growth · 14

Effect of Illumination on the Electrical Characteristics of AlGaN/GaN FETs

1999 · R. Dietrich, A. Vescan, et al. · physica status solidi (a) · 13

Reduction of base-collector capacitance in InP/InGaAs HBT's using a novel double polyimide planarization process

1998 · Hyunchol Shin, C. Gaessler, et al. · IEEE Electron Device Letters · 13

Works count: 69

Citation count: 1,251

H-index: 17

I10-index: 30