Work

AlGaN/GaN HEMTs on Si(111) with 6.6 W/mm output power density

Year: 2003

Type: article

Source: Electronics Letters

DOI: 10.1049/el:20030395

Authors: R. Behtash, H. Tobler, M. Neuburger, A. Schurr, H. Leier, Y. Cordier, F. Semond, F. Natali, J. Massies

Institutions: Daimler (Germany), Universität Ulm, Centre National de la Recherche Scientifique, Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2002137196

FWCI: 7.544

Cites: 8

Cited by: 62

Related to: 10