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Satoshi Urakawa
Observed name:
S. Urakawa
Institution:
Nara Institute of Science and Technology
Observed institution:
Nara Institute of Science and Technology
ORCID:
0000-0001-9546-2862
Observed ORCID:
0000-0001-9546-2862
OpenAlex ID:
A5083381556
Thermal analysis of amorphous oxide thin-film transistor degraded by combination of joule heating and hot carrier effect
2013
·
Satoshi Urakawa
, Shigekazu Tomai
, et al.
·
Applied Physics Letters
·
98
PDF
Effect of contact material on amorphous InGaZnO thin-film transistor characteristics
2014
·
Yoshihiro Ueoka
, Yasuaki Ishikawa
, et al.
·
Japanese Journal of Applied Physics
·
43
PDF
Density of States in Amorphous In-Ga-Zn-O Thin-Film Transistor under Negative Bias Illumination Stress
2014
·
Yoshihiro Ueoka
, Yasuaki Ishikawa
, et al.
·
ECS Journal of Solid State Science and Technology
·
41
PDF
Analysis of electronic structure of amorphous InGaZnO/SiO2 interface by angle-resolved X-ray photoelectron spectroscopy
2013
·
Y. Ueoka
, Y. Ishikawa
, et al.
·
Journal of Applied Physics
·
26
Thermal analysis for observing conductive filaments in amorphous InGaZnO thin film resistive switching memory
2014
·
Keisuke Kado
, Mutsunori Uenuma
, et al.
·
Applied Physics Letters
·
13
Thermal distribution in amorphous InSnZnO thin‐film transistor
2013
·
Satoshi Urakawa
, Shigekazu Tomai
, et al.
·
Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics
·
11
Self-heating induced instability of oxide thin film transistors under dynamic stress
2016
·
Kahori Kise
, Mami N. Fujii
, et al.
·
Applied Physics Letters
·
8
(Invited) Analysis of Thermal Degradation in Oxide Thin Film Transistors
2014
·
Yukiharu Uraoka
, Satoshi Urakawa
, et al.
·
ECS Transactions
·
1
PDF
[Young Scientist Presentation Award Speech] Solution-Processed Metal Oxide Thin-Film Transistor with Printed-Silver Electrode
2015
·
Satoshi Urakawa
·
The Japan Society of Applied Physics
Analysis of self-heating phenomenon in oxide thin-film transistors under pulsed bias voltage
2015
·
Kahori Kise
, Shigekazu Tomai
, et al.
·
International Workshop on Active-Matrix Flatpanel Displays and Devices
Fully compatible resistive random access memory with amorphous InGaZnO based thin film transistor fabrication process
2015
·
Keisuke Kado
, Mutsunori Uenuma
, et al.
·
IEICE technical report. Speech
Solution-Processed Metal Oxide Thin-Film Transistor with Printed-Silver Electrode
2015
·
Satoshi Urakawa
·
The Japan Society of Applied Physics
Analysis of Thermal Degradation in Oxide Thin Film Transistors
2014
·
Yukiharu Uraoka
, Satoshi Urakawa
, et al.
·
ECS Meeting Abstracts
Analysis of heating phenomenon in oxide thin-film transistor under pulse voltage stress
2014
·
Kahori Kise
, Mami Fujii
, et al.
·
IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)
Analysis of thermal-induced degradation in oxide thin-film transistor under pulse voltage stress
2013
·
Kahori Kise
, Shigekazu Tomai
, et al.
·
IEICE Technical Report; IEICE Tech. Rep.
High stable amorphous InAlZnO-based thin-film transistor
2013
·
Satoshi Urakawa
·
The Japan Society of Applied Physics
Scale Dependence of Heating and Degradation Phenomena for Oxide Thin-Film Transistor
2013
·
Satoshi Urakawa
·
The Japan Society of Applied Physics
Thermal degradation and theoretical analysis of amorphous oxide thin-film transistor
2013
·
Satoshi Urakawa
, Shigekazu Tomai
, et al.
·
International Workshop on Active-Matrix Flatpanel Displays and Devices
Unique property of a-InGaZnO/Ag interface on thin-film transistor
2013
·
Yoshihiro Ueoka
, Yasuaki Ishikawa
, et al.
·
International Workshop on Active-Matrix Flatpanel Displays and Devices
△Analysis of Degradation Phenomenon Caused by Self-Heating Effect in Amorphous Oxide Thin-Film Transistor
2013
·
Satoshi Urakawa
·
The Japan Society of Applied Physics
Thermal Simulation of Amorphous Oxide Thin Film Transistor
2013
·
Satoshi Urakawa
·
The Japan Society of Applied Physics
Theoretical Analysis of Degradation Phenomena in a-Oxide TFT by Device Simulation
2012
·
Satoshi Urakawa
, Yoshihiro Ueoka
, et al.
·
IEICE Technical Report; IEICE Tech. Rep.
Depth-resolved electronic structure analysis of IGZO/SiO2 interface by two-dimensional photoelectron spectroscopy
2012
·
Y. Ueoka
, F. Matsui
, et al.
·
International Conference on Solid State Devices and Materials (SSDM)
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Works count:
23
Citation count:
241
H-index:
7
I10-index:
6
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