Work

Thermal distribution in amorphous InSnZnO thin‐film transistor

Year: 2013

Type: article

Source: Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics

DOI: 10.1002/pssc.201300253

Authors: Satoshi Urakawa, Shigekazu Tomai, Yoshihiro Ueoka, Haruka Yamazaki, Masashi Kasami, Koki Yano, Dapeng Wang, Mamoru Furuta, Masahiro Horita, Yasuaki Ishikawa, Yukiharu Uraoka

Institutions: Nara Institute of Science and Technology, Idemitsu Kosan (Japan), Kochi University of Technology, Japan Science and Technology Agency

Language: English

Topic: Thin-Film Transistor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: Japan Society for the Promotion of Science

Awards: Zinc oxide transparent transistor and its application to stacked image sensor, Low temperature polycrystalline thin film transistors for next generation high performance display

OpenAlex ID: W1852100686

FWCI: 0.372

Cites:

Cited by: 11

Related to: 10