Get started
Author

Janet L. Benton

Observed names: J Benton, J. Benton, J. L. BENTON, J. L. Benton, J.-L. Benton, J.L. Benton, Janet Benton, Janet L Benton
OpenAlex ID: A5083733474
Impurity enhancement of the 1.54-μm Er3+ luminescence in silicon
1991 · J. Michel, J. L. Benton, et al. · Journal of Applied Physics · 420
Local structure of 1.54-μm-luminescence Er3+ implanted in Si
1992 · D. L. Adler, D. C. Jacobson, et al. · Applied Physics Letters · 249
Interstitial Defect Reactions in Silicon
1989 · Lionel C. Kimerling, M.T. Asom, et al. · Materials science forum · 193
Hydrogen passivation of point defects in silicon
1980 · J. L. Benton, C. J. Doherty, et al. · Applied Physics Letters · 179
Oxygen-related donor states in silicon
1981 · L. C. Kimerling, J. L. Benton · Applied Physics Letters · 171
Microstructure of erbium-implanted Si
1991 · D. J. Eaglesham, J. Michel, et al. · Applied Physics Letters · 157
Interstitial defect reactions in silicon
1987 · M. T. Asom, J. L. Benton, et al. · Applied Physics Letters · 149
Evolution from point to extended defects in ion implanted silicon
1997 · J. L. Benton, S. Libertino, et al. · Journal of Applied Physics · 147
Electronically controlled reactions of interstitial iron in silicon
1983 · L.C. Kimerling, J.L. Benton · Physica B+C · 145
The electrical and defect properties of erbium-implanted silicon
1991 · J. L. Benton, J. Michel, et al. · Journal of Applied Physics · 133
Carbon in silicon: Modeling of diffusion and clustering mechanisms
2002 · R. Pinacho, P. Castrillo, et al. · Journal of Applied Physics · 86
Formation, evolution, and annihilation of interstitial clusters in ion-implanted Si
2001 · Sebania Libertino, Salvatore Coffa, et al. · Physical review. B, Condensed matter · 81
Electrical signatures and thermal stability of interstitial clusters in ion implanted Si
1998 · J. L. Benton, K. Halliburton, et al. · Journal of Applied Physics · 75
Defect states in electron bombarded n -InP
1982 · M. Levinson, J. L. Benton, et al. · Applied Physics Letters · 66
Diagnostic Techniques for Semiconductor Materials and Devices
1994 · P. Rai‐Choudhury, J. L. Benton, et al. · 64
Iron gettering mechanisms in silicon
1996 · J. L. Benton, P. A. Stolk, et al. · Journal of Applied Physics · 60
Capacitance Transient Spectroscopy of Trace Contamination in Silicon
1982 · J. L. Benton, L. C. Kimerling · Journal of The Electrochemical Society · 56
PDF
Extrinsic self-trapping and negative U in semiconductors: A metastable center in InP
1984 · Michael Stavola, Mark Levinson, et al. · Physical review. B, Condensed matter · 50
Electronically controlled metastable defect reaction in InP
1983 · M. Levinson, J. L. Benton, et al. · Physical review. B, Condensed matter · 50
The mechanism of iron gettering in boron-doped silicon
1996 · P. A. Stolk, J. L. Benton, et al. · Applied Physics Letters · 49
The oxygen related donor effect in silicon
1983 · J.L. Benton, L.C. Kimerling, et al. · Physica B+C · 45
Defects in Laser-processed Semiconductors
1980 · L.C. Kimerling, J.L. Benton · Elsevier eBooks · 45
Formation of extended defects in silicon by high energy implantation of B and P
1996 · J. Y. Cheng, D. J. Eaglesham, et al. · Journal of Applied Physics · 43
Recombination enhanced defect annealing in n-InP
1984 · J. L. Benton, M. Levinson, et al. · Applied Physics Letters · 43
Metastable M center in InP: Defect-charge-state—controlled structural relaxation
1983 · M. Levinson, M. Stavola, et al. · Physical review. B, Condensed matter · 43
Works count: 72
Citation count: 3,276
H-index: 28
I10-index: 43
Year
Topic
Type