Interstitial defect reactions in silicon
Year: 1987
Type: article
Source: Applied Physics Letters
DOI: 10.1063/1.98465
Authors: M. T. Asom, J. L. Benton, R. Sauer, L. C. Kimerling
Institution: AT&T (United States)
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2018011306