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R. Sauer

Dislocation-related photoluminescence in silicon
1985 · R. Sauer, J. Weber, et al. · Applied Physics A · 395
Stacking fault related 3.31−eV luminescence at 130−meV acceptors in zinc oxide
2008 · M. Schirra, R. Schneider, et al. · Physical Review B · 281
Donor–acceptor pair transitions in ZnO substrate material
2001 · K. Thonke, Th. Gruber, et al. · Physica B Condensed Matter · 259
Photoluminescence and reflectance spectroscopy of excitonic transitions in high-quality homoepitaxial GaN films
1999 · K. Kornitzer, T. Ebner, et al. · Physical review. B, Condensed matter · 251
Raman scattering in ion-implanted GaN
1998 · W. Limmer, W. Ritter, et al. · Applied Physics Letters · 227
Optical properties of copper in silicon: Excitons bound to isoelectronic copper pairs
1982 · J. Weber, H. Bauch, et al. · Physical review. B, Condensed matter · 167
Interstitial defect reactions in silicon
1987 · M. T. Asom, J. L. Benton, et al. · Applied Physics Letters · 149
1.681-eV luminescence center in chemical-vapor-deposited homoepitaxial diamond films
1994 · H. Sternschulte, K. Thonke, et al. · Physical review. B, Condensed matter · 133
Temperature dependence of the E2 and A1(LO) phonons in GaN and AlN
1999 · A. Link, K. Bitzer, et al. · Journal of Applied Physics · 131
Raman phonon piezospectroscopy in GaAs: Infrared measurements
1987 · P. Wickboldt, E. Anastassakis, et al. · Physical review. B, Condensed matter · 131
Localized exciton bound to an isoelectronic trap in silicon
1980 · J. Weber, W. Schmid, et al. · Physical review. B, Condensed matter · 111
Optical evidence for 630-meV phosphorus donor in synthetic diamond
1999 · H. Sternschulte, K. Thonke, et al. · Physical review. B, Condensed matter · 110
Type-II band alignment in Si/ Si1−x Gex quantum wells from photoluminescence line shifts due to optically induced band-bending effects: Experiment and theory
1994 · T. Baier, U. Mantz, et al. · Physical review. B, Condensed matter · 110
Photoinduced Space-Charge Buildup by Asymmetric Electron and Hole Tunneling in Coupled Quantum Wells
1988 · R. Sauer, K. Thonke, et al. · Physical Review Letters · 100
New model of the irradiation-induced 0.97-eV ( G ) line in silicon: A CS−Si* complex
1981 · K. Thonke, H. Klemisch, et al. · Physical review. B, Condensed matter · 97
Angle-dependent magnetotransport in cubic and tetragonal ferromagnets: Application to (001)- and (113)A -oriented (Ga,Mn)As
2006 · W. Limmer, M. Glunk, et al. · Physical Review B · 83
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Nanoporous Gold Films Created Using Templates Formed from Self‐Assembled Structures of Inorganic–Block Copolymer Micelles
2003 · M. Haupt, S. Miller, et al. · Advanced Materials · 83
Evidence for Bound Multiple-Exciton Complexes in Silicon
1973 · R. Sauer · Physical Review Letters · 81
Interface-roughness-controlled exciton mobilities in GaAs/ Al0.37 Ga0.63 As quantum wells
1990 · H. Hillmer, A. Forchel, et al. · Physical review. B, Condensed matter · 74
Ultraviolet-emitting ZnO nanowhiskers prepared by a vapor transport process on prestructured surfaces with self-assembled polymers
2003 · M. Haupt, A. Ladenburger, et al. · Journal of Applied Physics · 71
Direct observation of band-edge luminescence and alloy luminescence from ultrametastable silicon-germanium alloy layers
1992 · J. Spitzer, K. Thonke, et al. · Applied Physics Letters · 71
Structure of the 0.767-eV oxygen-carbon luminescence defect in 450 °C thermally annealed Czochralski-grown silicon
1989 · W. Kürner, R. Sauer, et al. · Physical review. B, Condensed matter · 70
Thermal carrier emission from a semiconductor quantum well
1995 · S. Weber, W. Limmer, et al. · Physical review. B, Condensed matter · 67
Carbon and oxygen isotope effects in the 0.79 eV defect photoluminescence spectrum in irradiated silicon
1984 · K. Thonke, G.D. Watkins, et al. · Solid State Communications · 66
Electron–hole drops in synthetic diamond
2000 · K. Thonke, R. Schliesing, et al. · Diamond and Related Materials · 65
Works count: 228
Citation count: 7,315
H-index: 45
I10-index: 153
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