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Author

Yecheng Ding

Institution: Nanjing University
ORCID: 0000-0002-1665-5023
Observed ORCID: 0000-0002-1665-5023
OpenAlex ID: A5083828432
Strong piezoelectricity of the nm-thick flexible Hf0.5Zr0.5O2 ferroelectric film
2023 · Nannan Liu, Xinping Zhang, et al. · Journal of Alloys and Compounds · 14
Precise control of fatigue, wake-up, charge injection, and break-down in Hf0.5Zr0.5O2-based ferroelectric memories
2024 · Nannan Liu, Chunlai Luo, et al. · Applied Physics Letters · 12
High macroscopic piezoelectric d33 of the nm-thick flexible PZT ferroelectric film
2024 · Rui Zhang, Yecheng Ding, et al. · Journal of Materials Science Materials in Electronics · 10
Strain-Manipulated Photovoltaic and Photoelectric Effects of the MAPbBr 3 Single Crystal
2022 · Yecheng Ding, Xuefeng Zhao, et al. · ACS Applied Materials & Interfaces · 9
High-temperature stability of Hf0.5Zr0.5O2-based ferroelectric memory devices
2025 · Hongdi Wu, Boxu Yan, et al. · Acta Materialia · 8
Macroscopic Piezoelectricity of Halide Perovskite Single Crystals and Their Highly Sensitive Self-Powered X-ray Detectors
2023 · Xuefeng Zhao, Zeen Zhao, et al. · ACS Applied Materials & Interfaces · 7
Phenomenological modeling of anisotropic dielectric properties in epitaxial (Pb, Sr)TiO3 thin films
2020 · Yecheng Ding, Wenhui Ma · AIP Advances · 7
Photo-electro-striction in halide perovskite semiconductors
2022 · Zeen Zhao, Yecheng Ding, et al. · Applied Physics Letters · 6
Flexible Self-Powered Vertical Photodetectors Based on the [001]-Oriented CsPbBr3 Film
2023 · Zeen Zhao, Wenbin Tang, et al. · The Journal of Physical Chemistry C · 5
Light and Force Multifunctional Detector Based on the Interfacial Polarization of the ITO/MAPbBr3 Schottky Junction
2023 · Yecheng Ding, Xuefeng Zhao, et al. · Advanced Optical Materials · 2
High-precision and flexible magnetoelectric sensor operated at 25–330 °C
2023 · Zeen Zhao, Xuefeng Zhao, et al. · APL Materials · 1
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Area-Selective Atomic Layer Deposition of Al2O3 on GaN Using Microcontact-Printed Octadecylphosphonic Acid Layers
2026 · Zihao Li, Xiaohong Zeng, et al. · The Journal of Physical Chemistry C
Thermal Stress and Parameter Sensitivity Analysis of nTSVs in BSPDN Using Sub-modeling Technique
2026 · Yansong Li, Fei Huang, et al. · International Conference on Electronic Packaging Technology (ICEPT)
A robust Hf 0.5 Zr 0.5 O 2 ferroelectric memory with high remanent polarization at 1 V and excellent stability up to 250 °C
2026 · Hongdi Wu, Yecheng Ding, et al. · Nanoscale
MAPbI 3 piezoelectric semiconductor and its multifunctional light-force detector
2025 · Yong Huang, Xuefeng Zhao, et al. · Journal of Materials Chemistry C
Plasma-enhanced ALD growth of ε-(Al x Ga 1− x ) 2 O 3 alloy films with high Al content and tunable band offsets
2025 · Jinteng Zhang, Xiaohong Zeng, et al. · Journal of Materials Chemistry C
Precise Control of Charge Injection, Fatigue, Wake-Up and Break-Down in Hf₀.₅Zr₀.₅O₂-Based Ferroelectric Memories
2024 · Nannan Liu, Chunlai Luo, et al. · SSRN Electronic Journal
Works count: 17
Citation count: 79
H-index: 7
I10-index: 3
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