Work

Area-Selective Atomic Layer Deposition of Al2O3 on GaN Using Microcontact-Printed Octadecylphosphonic Acid Layers

Year: 2026

Type: article

Source: The Journal of Physical Chemistry C

DOI: 10.1021/acs.jpcc.6c02818

Authors: Zihao Li, Xiaohong Zeng, Jinteng Zhang, Shicheng Yang, Shicheng Han, Yecheng Ding, Yaping Kong, Nan Hu, Yang Shen, Sunan Ding

Institutions: Nanjing University, Chinese Academy of Sciences, Suzhou Institute of Nano-tech and Nano-bionics

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W7203500632

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Cites: 46

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