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T. Bottner
Institution:
Infineon Technologies (Germany)
Observed institutions:
Infineon Technologies (Germany),
Technische Universität Darmstadt,
Deutsche Telekom (Germany)
OpenAlex ID:
A5084428569
SiGe bipolar technology for automotive radar applications
2004
·
J. Bock
, H. Schiffer
, et al.
·
IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)
·
167
3.3 ps SiGe bipolar technology
2005
·
J. Bock
, H. Schafer
, et al.
·
Technical digest - International Electron Devices Meeting/Technical digest
·
39
High-speed SiGe HBT technology and applications to mm-wave circuits
2005
·
T.F. Meister
, H. Knapp
, et al.
·
IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)
·
10
Surface- and sidewall-damage of InP-based optoelectronic devices during reactive ion etching using CH/sub 4//H/sub 2/
2002
·
T. Bottner
, H. Krautle
, et al.
·
Conference proceedings. ... International Conference on Indium Phosphide and Related Materials
·
9
A manufacturable 0.35 μm 150 GHz f/sub T/ SiGe:C bipolar RF technology
2003
·
M. Schwerd
, M. Seck
, et al.
·
IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)
·
5
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Works count:
5
Citation count:
230
H-index:
5
I10-index:
3
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