Work

Surface- and sidewall-damage of InP-based optoelectronic devices during reactive ion etching using CH/sub 4//H/sub 2/

Year: 2002

Type: conference-paper

Source: Conference proceedings. ... International Conference on Indium Phosphide and Related Materials

DOI: 10.1109/iciprm.1996.491948

Authors: T. Bottner, H. Krautle, E. Kuphal, K. Miethe, H.L. Hartnagel

Institutions: Technische Universität Darmstadt, Deutsche Telekom (Germany)

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W1896798533

FWCI: 2.253

Cites: 7

Cited by: 9

Related to: 10