Author

Sun Dz

OpenAlex ID: A5084510971

Mbe Growth of High-quality P-type Gaas Films

1987 · Liang Jb, Sun Dz, et al. · SEMI-IR · 2

Interface Reactions and Vacuum Annealing Effects of Mbe Al/gaas

1986 · Zhong Zt, Chen Zg, et al. · SEMI-IR · 1

NH 3 を使用する分子線エピタキシーによって窒化サファイア上に堆積し、成長表面上で亀裂したGaNの電気特性

1999 · Zhang J-P, Sun Dz, et al. · Journal of Crystal Growth

Boron diffusion in Ge+ premorphized and BF2+ implanted Si(001)

1998 · Zou Lf, Acosta-Ortiz Se, et al. · SEMI-IR

Gas source molecular beam epitaxy and thermal stability of Si1-xGex/Si superlattice materials

1998 · Zou Lf, Acosta-Ortiz Se, et al. · SEMI-IR

Transient photocurrent investigation of photo-processes of lattice-matched MQW GaAs/AlxGa1-xAs electrode

1995 · Liu Y, Yuan Lin, et al. · SEMI-IR

Pressure-induced Metastable Carrier Concentrations in Gaas/gaalas Heterostructure

1988 · T. Suski, E. Litwin‐Staszewska, et al. · SEMI-IR

Mbe Growth of Gaas-algaas Quantum-well and Superlattice Structures

1986 · Chen Zg, Sun Dz, et al. · SEMI-IR

Works count: 8

Citation count: 3

H-index: 1

I10-index: