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NH 3 を使用する分子線エピタキシーによって窒化サファイア上に堆積し、成長表面上で亀裂したGaNの電気特性

Year: 1999

Type: article

Source: Journal of Crystal Growth

Authors: Zhang J-P, Sun Dz, Li X-B, Xianling Wang, Kong My, Zeng Y-P, Li J-M, Lin Ly

Language: Japanese

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W3208224911

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