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Jun’ichi Tsuchimoto

Thermally stable Pd/Ge ohmic contacts to n-type GaAs
1991 · Jun’ichi Tsuchimoto, Shin’ichi Shikata, et al. · Journal of Applied Physics · 47
Laser-induced thermochemical maskless-etching of III?V compound semiconductors in chloride gas atmosphere
1988 · M. Takai, J. Tsuchimoto, et al. · Applied Physics A · 25
Fluorine incorporation into HfSiON dielectric for V/sub th/ control and its impact on reliability for poly-Si gate pFET
2006 · M. Inoue, S. Tsujikawa, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 23
Local Temperature Rise during Laser Induced Etching of Gallium Arsenide in SiCl4 Atmosphere
1985 · Mikio Takai, Hiroyuki Nakai, et al. · Japanese Journal of Applied Physics · 23
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Maskless Dry Etching of Gallium Arsenide with a Submicron Line-Width by Laser Pyrolysis in CCl4 Gas Atmosphere
1984 · Mikio Takai, Junichi Tsuchimoto, et al. · Japanese Journal of Applied Physics · 21
Low-resistive and homogenous NiPt-silicide formation using ultra-low temperature annealing with microwave system for 22nm-node CMOS and beyond
2010 · T. Yamaguchi, Y. Kawasaki, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 17
Interface analysis of oxide free MoS2 films fabricated by solution process
2024 · Md Iftekharul Alam, Rikiya Sumichika, et al. · Scientific Reports · 14
Suppression of Anomalous Gate Edge Leakage Current by Control of Ni Silicidation Region using Si Ion Implantation Technique
2006 · T. Yamaguchi, K. Kashihara, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 14
Analytical Approach for Enhancement of n-Channel Metal–Oxide–Semiconductor Field-Effect Transistor Performance with Carbon-Doped Source/Drain Formed by Molecular Carbon Ion Implantation and Laser Annealing
2011 · Tadashi Yamaguchi, Yoji Kawasaki, et al. · Japanese Journal of Applied Physics · 10
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Analysis of Channel Stress Induced by NiPt-Silicide in Metal–Oxide–Semiconductor Field-Effect Transistor and Its Generation Mechanism
2013 · Mariko Mizuo, Tadashi Yamaguchi, et al. · Japanese Journal of Applied Physics · 9
Impact of CoFeB surface roughness on reliability of MgO films in CoFeB/MgO/CoFeB magnetic tunnel junction
2019 · Hyeonwoo Park, Akinobu Teramoto, et al. · Japanese Journal of Applied Physics · 8
Impact of additional Pt and NiSi crystal orientation on channel stress induced by Ni silicide film in metal–oxide–semiconductor field-effect transistors
2014 · Mariko Mizuo, Tadashi Yamaguchi, et al. · Japanese Journal of Applied Physics · 8
Anomalous Gate-Edge Leakage Current in nMOSFETs Caused by Encroached Growth of Nickel Silicide and Its Suppression by Confinement of Silicidation Region Using Advanced $\hbox{Si}^{+}$ Ion-Implantation Technique
2009 · Tadashi Yamaguchi, Keiichiro Kashihara, et al. · IEEE Transactions on Electron Devices · 8
80 nm CMOSFET technology using double offset-implanted source/drain extension and low temperature SiN process
2002 · H. Sayama, Y. Nishida, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 7
Vth-tunable CMIS platform with high-k gate dielectrics and variability effect for 45nm node
2006 · Hayashi, M. Mizutani, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 6
High density embedded DRAM technology with 0.38 μm pitch in DRAM and 0.42 μm pitch in LOGIC by W/PolySi gate and Cu dual damascene metallization
2002 · N. Takenaka, M. Segawa, et al. · Symposium on VLSI Technology · 6
Switching characteristics of MgO-based MTJ with intermediate state
2024 · Yuya Miyazaki, Chihiro Watanabe, et al. · Japanese Journal of Applied Physics · 5
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Diffusion Control Techniques for TiN Stacked Metal Gate Electrodes for p-Type Metal Insulator Semiconductor Field Effect Transistors
2007 · Shinsuke Sakashita, Takaaki Kawahara, et al. · Japanese Journal of Applied Physics · 5
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X-ray absorption and emission spectroscopy at the Hf L1 edge of hafnium-(silicon)-oxide ultra-thin films
2005 · Yasushi Uehara, Kazumasa Kawase, et al. · Journal of Electron Spectroscopy and Related Phenomena · 5
Investigation of the Divided Deposition Method of TiN Thin Films for Metal–Insulator–Metal Capacitor Applications
2005 · Tomonori Okudaira, Takeshi Hayashi, et al. · Japanese Journal of Applied Physics · 4
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High reliability CoFeB/MgO/CoFeB magnetic tunnel junction fabrication using low-damage ion beam etching
2020 · Hyeonwoo Park, Akinobu Teramoto, et al. · Japanese Journal of Applied Physics · 3
Compositional analysis of Hf Si O1−− thin films by medium energy ion scattering (MEIS) analysis
2006 · H. Kitano, S. Abo, et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 3
A novel self-aligned gate process for half-micrometer gate GaAs ICs using ECR-CVD
1990 · S. Shikata, J. Tsuchimoto, et al. · IEEE Transactions on Electron Devices · 3
Maskless Dry Etching of GaAs by Focused Laser Beam
1984 · M. Takai, H. Nakai, et al. · Springer series in chemical physics · 3
Evaluation of MR ratio and reliability of MTJ device having SiN sidewall by modifying reference layer thickness
2022 · Yoshiteru Amemiya, Junichi Tsuchimoto, et al. · Japanese Journal of Applied Physics · 2
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Works count: 52
Citation count: 290
H-index: 9
I10-index: 9
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