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Andres Bryant

Silicon CMOS devices beyond scaling
2006 · W. Haensch, E. J. Nowak, et al. · IBM Journal of Research and Development · 471
Ultralow-voltage, minimum-energy CMOS
2006 · S. Hanson, B. Zhai, et al. · IBM Journal of Research and Development · 215
High performance 14nm SOI FinFET CMOS technology with 0.0174µm 2 embedded DRAM and 15 levels of Cu metallization
2014 · C-H. Lin, B. Greene, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 133
FinFET performance advantage at 22nm: An AC perspective
2008 · M. Guillorn, J. Chang, et al. · Symposium on VLSI Technology · 86
Low-power CMOS at Vdd=4kT/q
2002 · A. Bryant, J. Brown, et al. · Conference digest · 80
Channel doping impact on FinFETs for 22nm and beyond
2012 · C.-H. Lin, R. Kambhampati, et al. · Symposium on VLSI Technology · 69
GIDL in Doped and Undoped FinFET Devices for Low-Leakage Applications
2012 · Pranita Kerber, Qintao Zhang, et al. · IEEE Electron Device Letters · 65
A 7nm CMOS technology platform for mobile and high performance compute application
2017 · S. Narasimha, B. Jagannathan, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 62
Characteristics of CMOS device isolation for the ULSI age
2002 · A. Bryant, W. Hansch, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 57
Energy optimality and variability in subthreshold design
2006 · Scott Hanson, Bo Zhai, et al. · International Symposium on Low Power Electronics and Design (ISLPED) · 46
Mainstreaming of the SOI technology
1999 · G. Shahidi, H.-S. Lo, et al. · IEEE International SOI Conference (SOI) · 39
The effects of gate field on the leakage characteristics of heavily doped junctions
1989 · W.P. Noble, S.H. Voldman, et al. · IEEE Transactions on Electron Devices · 38
The current-carrying corner inherent to trench isolation
1993 · A. Bryant, W. Haensch, et al. · IEEE Electron Device Letters · 35
Sub-25nm FinFET with advanced fin formation and short channel effect engineering
2011 · Takashi Yamashita, V. Basker, et al. · Symposium on VLSI Technology · 34
Comprehensive study of effective current variability and MOSFET parameter correlations in 14nm multi-fin SOI FINFETs
2013 · A. Paul, A. Bryant, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 33
Investigation of CMOS devices with embedded sige source/drain on hybrid orientation substrates
2005 · Qiqing Ouyang, Min Yang, et al. · Symposium on VLSI Technology · 25
Dual stress liner enhancement in hybrid orientation technology
2005 · C.D. Sheraw, M. Yang, et al. · Symposium on VLSI Technology · 25
Modeling of width-quantization-induced variations in logic FinFETs for 22nm and beyond
2011 · Chung-Hsun Lin, Wilfried Haensch, et al. · Symposium on VLSI Technology · 24
A novel ALD SiBCN low-k spacer for parasitic capacitance reduction in FinFETs
2015 · T. Yamashita, S. Mehta, et al. · Symposium on VLSI Technology · 23
ETSOI CMOS for system-on-chip applications featuring 22nm gate length, sub-100nm gate pitch, and 0.08µm 2 SRAM cell
2011 · Kangguo Cheng, A. Khakifirooz, et al. · Symposium on VLSI Circuits · 19
Non-planar device architecture for 15nm node: FinFET or trigate?
2010 · Chung-Hsun Lin, Josephine Chang, et al. · IEEE International SOI Conference (SOI) · 18
Performance comparison and channel length scaling of strained Si FETs on SiGe-on-Insulator (SGOI)
2005 · J. Cai, K. Rim, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 18
Impact of Lateral Asymmetric Channel Doping on 45-nm-Technology N-Type SOI MOSFETs
2009 · Hasan M. Nayfeh, Nivo Rovedo, et al. · IEEE Transactions on Electron Devices · 15
Energy Optimality and Variability in Subthreshold Design
2006 · Scott Hanson, Bo Zhai, et al. · International Symposium on Low Power Electronics and Design (ISLPED) · 15
A fundamental performance limit of optimized 3.3-V sub-quarter-micrometer fully overlapped LDD MOSFET's
1992 · A. Bryant, B. El-Kareh, et al. · IEEE Transactions on Electron Devices · 15
Works count: 44
Citation count: 1,748
H-index: 19
I10-index: 28
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