A novel ALD SiBCN low-k spacer for parasitic capacitance reduction in FinFETs
Year: 2015
Type: conference-paper
Source: Symposium on VLSI Technology
Authors: T. Yamashita, S. Mehta, V.S. Basker, R. Southwick, A. Kumar, R. Kambhampati, R. Sathiyanarayanan, J. Johnson, T. Hook, S. Cohen, J. Li, A. Madan, Z. Zhu, L. Tai, Y. Yao, P. Chinthamanipeta, M. Hopstaken, Z. Liu, D. Lu, F. Chen, S. Khan, D. Canaperi, B. Haran, J. Stathis, P. Oldiges, C-H. Lin, S. Narasimha, A. Bryant, W.K. Henson, S. Kanakasabapathy, K.V.R.M. Murali, T. Gow, D. McHerron, H. Bu, M. Khare
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W1490467978