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E. Van Moorhem

Observed names: E Van Moorhem, E. Moorhem
Institution: IMEC
Observed institution: IMEC
OpenAlex ID: A5084817034
Optimisation of a thin epitaxial Si layer as Ge passivation layer to demonstrate deep sub-micron n- and p-FETs on Ge-On-Insulator substrates
2005 · B. De Jaeger, R. Bonzom, et al. · Microelectronic Engineering · 96
The future of high-K on pure germanium and its importance for Ge CMOS
2004 · M. Meuris, A. Delabie, et al. · Materials Science in Semiconductor Processing · 18
Ge deep sub-micron HiK/MG pFETs with superior drive compared to Si HiK/MG state-of-the-art reference
2006 · B De Jaeger, B Kaczer, et al. · Semiconductor Science and Technology · 14
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Ge deep sub-micron pFETs with etched TaN metal gate on a high-k dielectric, fabricated in a 200mm silicon prototyping line
2004 · B. De Jaeger, M. Houssa, et al. · European Solid-State Circuits Conference (ESSCIRC) · 10
Germanium Deep-Submicron p-FET and n-FET Devices, Fabricated on Germanium-On-Insulator Substrates
2007 · M. Meuris, B. Jaeger, et al. · Springer eBooks · 2
Ge Deep Sub-Micron HiK/MG pFET with Superior Drive Compared to Si HiK/MG State-of-the-Art Reference
2006 · B. DeJaeger, B. Kaczer, et al. · 2006 International SiGe Technology and Device Meeting · 2
Germanium deep-sub micron PMOS transistors with etched TaN metal gate on a high-k dielectric, fabricated in a 200mm prototyping line
2004 · Marc Meuris, Brice De Jaeger, et al. · 1
Ge Deep Sub-Micron HiK/MG pFET with Superior Drive Compared to Si HiK/MG State-of-the-Art Reference
2006 · B. DeJaeger, B. Kaczer, et al. · 2006 International SiGe Technology and Device Meeting
Works count: 8
Citation count: 143
H-index: 4
I10-index: 4
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