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Germanium Deep-Submicron p-FET and n-FET Devices, Fabricated on Germanium-On-Insulator Substrates

Year: 2007
Type: book-chapter
DOI: 10.1007/978-3-540-71491-0_15
Authors: M. Meuris, B. Jaeger, J. Steenbergen, R. Bonzom, M. Caymax, M. Houssa, B. Kaczer, F. Leys, K. Martens, K. Opsomer, A. M. Pourghaderi, A. Satta, E. Simoen, V. Terzieva, E. Moorhem, G. Winderickx, R. Loo, T. Clarysse, T. Conard, A. Delabie, D. Hellin, T. Janssens, B. Onsia, S. Sioncke, P. W. Mertens, J. Snow, S. Elshocht, W. Vandervorst, P. Zimmerman, D. Brunco, G. Raskin, F. Letertre, T. Akatsu, T. Billon, M. Heyns
Institutions: IMEC, Umicore (Belgium), Soitec (France), Commissariat à l'Énergie Atomique et aux Énergies Alternatives, CEA Grenoble, Laboratoire d'Électronique des Technologies de l'Information
Language: English
Open Access status: closed
OpenAlex ID: W66955665
FWCI: 1.023
Cites: 36
Cited by: 2
Related to: 10