Get started
Author

Alvaro D. Latorre-Rey

Observed names: A. D. Latorre Rey, A. Latorre-Rey, A.D. Latorre Rey, A.D. Latorre-Rey, Alvaro D. Latorre Rey, Alvaro Latorre-Rey, Álvaro D Latorre Rey, Álvaro D. Latorre Rey
ORCID: 0000-0003-4603-9894
Observed ORCID: 0000-0003-4603-9894
OpenAlex ID: A5085019685
Enhancement-Mode 300-mm GaN-on-Si(111) With Integrated Si CMOS for Future mm-Wave RF Applications
2023 · Han Wui Then, M. Radosavljevic, et al. · IEEE Microwave and Wireless Technology Letters · 41
A $\Pi$ -Shaped Gate Design for Reducing Hot-Electron Generation in GaN HEMTs
2018 · Alvaro D. Latorre Rey, John D. Albrecht, et al. · IEEE Transactions on Electron Devices · 32
Scaled Submicron Field-Plated Enhancement Mode High-K Gallium Nitride Transistors on 300mm Si(111) Wafer with Power FoM (RON xQGG) of 3.1 mohm-nC at 40V and fT/fMAX of 130/680GHz
2022 · Han Wui Then, M. Radosavljevic, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 31
DrGaN: an Integrated CMOS Driver-GaN Power Switch Technology on 300mm GaN-on-Si with E-mode GaN MOSHEMT and 3D Monolithic Si PMOS
2023 · Han Wui Then, M. Radosavljevic, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 25
Hot electron generation under large-signal radio frequency operation of GaN high-electron-mobility transistors
2017 · Alvaro D. Latorre-Rey, Flavio F. M. Sabatti, et al. · Applied Physics Letters · 21
5G mmWave Power Amplifier and Low-Noise Amplifier in 300mm GaN-on-Si Technology
2022 · Qiang Yu, Han Wui Then, et al. · IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) · 20
Assessment of Self-Heating Effects Under Lateral Scaling of GaN HEMTs
2019 · Alvaro D. Latorre-Rey, Ky Merrill, et al. · IEEE Transactions on Electron Devices · 20
Indirect fitting procedure to separate the effects of mobility degradation and source-and-drain resistance in MOSFET parameter extraction
2009 · Adelmo Ortiz-Conde, Francisco J. García-Sánchez, et al. · Microelectronics Reliability · 20
Physics-Based Breakdown Voltage Optimization of Trench MOS Barrier Schottky Rectifiers
2018 · Alvaro D. Latorre-Rey, Mihir Mudholkar, et al. · IEEE Transactions on Electron Devices · 15
A Fully Integrated 3.2-4.7GHz Doherty Power Amplifier in 300mm GaN-on-Si Technology
2022 · Qiang Yu, Derek Thomson, et al. · IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) · 11
Extraction of Mobility Degradation and Source-and-Drain Resistance in MOSFETs
2020 · J. Muci, A. D. Latorre Rey, et al. · Journal of Integrated Circuits and Systems · 9
PDF
A new integration-based procedure to separately extract series resistance and mobility degradation in MOSFETs
2009 · Juan Muci, Denise C Lugo Muñoz, et al. · Semiconductor Science and Technology · 9
PDF
Parameter extraction in polysilicon nanowire MOSFETs using new double integration-based procedure
2010 · A. Ortiz-Conde, A.D. Latorre Rey, et al. · Solid-State Electronics · 8
A continuous semi-empiric transfer characteristics model for surrounding gate undoped polysilicon nanowire MOSFETs
2011 · F.J. García-Sánchez, A.D. Latorre-Rey, et al. · Solid-State Electronics · 7
Electro-thermal characterization of GaN HEMT on Si through selfconsistent energy balance-cellular Monte Carlo device simulations
2017 · Alvaro D. Latorre-Rey, Ky Merrill, et al. · Technical digest -- IEEE Compound Semiconductor Integrated Circuit Symposium · 6
Generation of hot electrons in GaN HEMTs under RF Class A and AB PAs
2017 · Alvaro D. Latorre-Rey, John D. Albrecht, et al. · Conference digest · 6
Trench MOS Schottky Diodes: A Physics-Based Analytical Model Approach to Charge Sharing
2025 · Mohammed Tanvir Quddus, Alvaro D. Latorre-Rey, et al. · Micromachines · 4
PDF
A charge-based model of Junction Barrier Schottky rectifiers
2018 · Alvaro D. Latorre-Rey, Mihir Mudholkar, et al. · Solid-State Electronics · 4
Design kit development on a 300mm GaN-on-Si demonstration platform with integrated Si pMOS
2024 · Samuel James Bader, Ahmad Zubair, et al. · IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) · 3
Erratum: “Hot electron generation under large-signal radio frequency operation of GaN high-electron-mobility transistors” [Appl. Phys. Lett. 111 , 013506 (2017)]
2017 · Alvaro D. Latorre-Rey, Flavio F. M. Sabatti, et al. · Applied Physics Letters
A comparisson of four parameter extraction methods for MOSFETs
2011 · Alvaro D. Latorre-Rey, Denise C Lugo Muñoz, et al.
Works count: 21
Citation count: 292
H-index: 10
I10-index: 10
Year
Topic
Type