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Design kit development on a 300mm GaN-on-Si demonstration platform with integrated Si pMOS

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Year: 2024
Type: conference-paper
Source: IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)
DOI: 10.1109/bcicts59662.2024.10745683
Authors: Samuel James Bader, Ahmad Zubair, Alvaro Latorre-Rey, Mikkel Hansen, Soumen Sarkar, Abdul Asif, Dimitri Frolov, Kaushik Narayanan, Jag Rangaswamy, Puneet Kanwar Kaur, Sanjeev Kumar, Nirmal Kundu, Shreyas Samraksh Jayaprakash, Abhijeet Khobragade, Yashwanth Pathivada, Qiang Yu, Jagannathan Vasudevan, Ibukun Momson, Said Rami, Heli Vora, Marko Radosavljevic, Pratik Koirala, Michael Beumer, Andrey Vyatskikh, Paul Nordeen, Thomas Hoff, Nachiket Desai, Han Wui Then
Institutions: Intel (United States), Intel (Taiwan)
Language: English

Topic: GaN-based semiconductor devices and materials
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
SDG: Industry, innovation and infrastructure

Open Access status: closed
OpenAlex ID: W4404295502
FWCI: 3.398
Cites: 14
Cited by: 3
Related to: 10
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