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R. Anisha
Observed name:
R Anisha
Institution:
The Ohio State University
Observed institution:
The Ohio State University
OpenAlex ID:
A5086621132
Si/SiGe Resonant Interband Tunneling Diodes Incorporating $\delta$-Doping Layers Grown by Chemical Vapor Deposition
2009
·
Si-Young Park
, R. Anisha
, et al.
·
IEEE Electron Device Letters
·
31
PDF
Fabrication of nanowires with high aspect ratios utilized by dry etching with SF6:C4F8 and self-limiting thermal oxidation on Si substrate
2010
·
Si-Young Park
, Sandro J. Di Giacomo
, et al.
·
Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena
·
18
P and B doped Si resonant interband tunnel diodes with as-grown negative differential resistance
2009
·
P.E. Thompson
, G.G. Jernigan
, et al.
·
Electronics Letters
·
10
Interfacial design and structure of protein/polymer films on oxidized AlGaN surfaces
2010
·
Samit K Gupta
, Hao-Hsuan Wu
, et al.
·
Journal of Physics D Applied Physics
·
9
Rational enhancement of nanobiotechnological device functions illustrated by partial optimization of a protein-sensing field effect transistor
2009
·
Theodore R. Nicholson
, Shikhar Gupta
, et al.
·
6
Strain engineered Si∕SiGe resonant interband tunneling diodes with outside barriers grown on Si0.8Ge0.2 virtual substrates
2008
·
R. Anisha
, Niu Jin
, et al.
·
Applied Physics Letters
·
4
Observation of strain in pseudomorphic Si1−xGex by tracking phonon participation in Si∕SiGe resonant interband tunnel diodes via electron tunneling spectroscopy
2009
·
Ronghua Yu
, R. Anisha
, et al.
·
Journal of Applied Physics
·
3
Simplified Si resonant interband tunnel diodes
2007
·
Phillip E. Thompson
, Glenn G. Jernigan
, et al.
·
International Semiconductor Device Research Symposium
·
1
Tunneling Based Quantum Functional Devices and Circuits for Low Power Vlsi Design
2012
·
R. Anisha
·
OhioLink ETD Center (Ohio Library and Information Network)
PDF
Zero-bias Si backward diodes detectors incorporating P and B δ-doping layers grown by chemical vapor deposition
2009
·
Si-Young Park
, R. Anisha
, et al.
·
International Semiconductor Device Research Symposium
200mm Si/SiGe Resonant Interband Tunneling Diodes Incorporating δ-Doping Layers Grown by CVD
2009
·
Si-Young Park
, R. Anisha
, et al.
·
Open Repository and Bibliography (University of Liège)
Temperature dependent empirical modeling of proximity diffused Si esaki diodes and memory circuits
2007
·
D. J. Pawlik
, S. Muhkerjee
, et al.
·
International Semiconductor Device Research Symposium
Anneal time study of Si resonant interband tunnel diodes grown by low-temperature molecular-beam epitaxy
2007
·
R. Krom
, D. J. Pawlik
, et al.
·
International Semiconductor Device Research Symposium
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Works count:
14
Citation count:
82
H-index:
5
I10-index:
3
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