Get started
Author

Roland Madar

Observed names: Madar R, Madar, R., Madar, Roland, R Madar, R. MADAR, R. Madar, ROLAND MADAR
Observed institutions: Institut polytechnique de Grenoble, University of Modena and Reggio Emilia, Centre National de la Recherche Scientifique, University of Sfax, Max Planck Society, National Taiwan University, Technion – Israel Institute of Technology, Université Joseph Fourier, Aarhus University, University of Pavia, Micro and Nanotechnology Innovation Centre, IRIS Instruments (France), Laboratoire des Matériaux et du Génie Physique, G.V. Kurdyumov Institute for Metal Physics, École Nationale d'Ingénieurs de Gabès, Institut Laue-Langevin, Institut de Relations Internationales et Stratégiques, Istituto Nazionale per la Fisica della Materia, Faculty of Sciences of Sfax
OpenAlex ID: A5089768142
Silicon carbide in contention
2004 · Roland Madar · Nature · 217
High pressure solution growth of GaN
1975 · R. Madar, G. Jacob, et al. · Journal of Crystal Growth · 129
Molybdenum disilicide: Crystal growth, thermal expansion and resistivity
1985 · O. Thomas, J.P. Senateur, et al. · Solid State Communications · 117
Electrical and optical properties of silicide single crystals and thin films
1993 · F. Nava, K.N. Tu, et al. · Materials Science Reports · 104
Structure antiferroma gnetique de Fe1. 125Te accompagnee d'une deformation monoclinique
1975 · D. Fruchart, P. Convert, et al. · Materials Research Bulletin · 98
Infrared and Raman characterization of beta iron silicide
1991 · K. Lefki, P. Muret, et al. · Solid State Communications · 82
Thermodynamic Heat Transfer and Mass Transport Modeling of the Sublimation Growth of Silicon Carbide Crystals
1996 · M. Pons, E. Blanquet, et al. · Journal of The Electrochemical Society · 79
Structure magnetique et rotation de spin de Mn3NiN
1971 · D. Fruchart, E.F. Bertaut, et al. · Solid State Communications · 68
Nickel film on (001) SiC: Thermally induced reactions
1998 · A Bächli, M.-A Nicolet, et al. · Materials Science and Engineering B · 67
State of the art in the modelling of SiC sublimation growth
1999 · M Pons, M Anikin, et al. · Materials Science and Engineering B · 60
Structural and electronic transport properties of ReSi2−δ single crystals
1995 · U. Gottlieb, B. Lambert-Andron, et al. · Journal of Applied Physics · 57
Metallurgical reinvestigation of rare earth silicides
1989 · E. Houssay, A. Rouault, et al. · Applied Surface Science · 54
Silica‐Based Oxide Systems: I . Experimental and Calculated Phase Equilibria in Silicon, Boron, Phosphorus, Germanium, and Arsenic Oxide Mixtures
1991 · G. Baret, R. Madar, et al. · Journal of The Electrochemical Society · 53
Interfacial reactions of W thin film on single-crystal (001) β-SiC
1995 · L. Baud, C. Jaussaud, et al. · Materials Science and Engineering B · 50
Control of the Supersaturation in the CF−PVT Process for the Growth of Silicon Carbide Crystals: Research and Applications
2005 · Didier Chaussende, Magali Ucar, et al. · Crystal Growth & Design · 49
Electrical and optical characterisation of vanadium in 4H and 6H–SiC
1999 · V Lauer, G Brémond, et al. · Materials Science and Engineering B · 49
Analysis of the electrical resistivity of Ti, Mo, Ta, and W monocrystalline disilicides
1989 · F. Nava, E. Mazzega, et al. · Journal of Applied Physics · 48
Les deformations quadratiques T1 et T4 dans les carbures et nitrures perowskites du manganese
1970 · M. Barberon, R. Madar, et al. · Materials Research Bulletin · 46
Low temperature specific heat of VSi2, NbSi2, and TaSi2
1993 · J. C. Lasjaunias, O. Laborde, et al. · Journal of Low Temperature Physics · 41
Temperature gradient controlled SiC crystal growth
1997 · M. Anikin, R. Madar · Materials Science and Engineering B · 38
New ternary pnictides with the CaBe2Ge2-type structure in the systems, rare-earth-RhP and rare-earth-RhAs
1987 · R. Madar, P. Chaudouet, et al. · Journal of the Less Common Metals · 38
Optical properties of WSi2 and MoSi2 single crystals as measured by spectroscopic ellipsometry and reflectometry
1987 · F Ferrieu, C Viguier, et al. · Solid State Communications · 38
Analyse cristallochimique des mecanismes de formation des phases ternaires LnMX (terre rare-métal de transition-non métal) de formule (□, Ln, M)2X
1987 · R. Madar, V. Ghetta, et al. · Journal of Solid State Chemistry · 38
Application of equilibrium thermodynamics to the development of diffusion barriers for copper metallization (invited)
2000 · C.E Ramberg, E Blanquet, et al. · Microelectronic Engineering · 37
Intrinsic properties of NiSi
1997 · B. Meyer, U. Gottlieb, et al. · Journal of Alloys and Compounds · 36
Works count: 358
Citation count: 4,283
H-index: 31
I10-index: 141
Year
Topic
Type