Work

Thermodynamic Heat Transfer and Mass Transport Modeling of the Sublimation Growth of Silicon Carbide Crystals

Year: 1996

Type: article

Source: Journal of The Electrochemical Society

DOI: 10.1149/1.1837280

Authors: M. Pons, E. Blanquet, J. M. Dedulle, I. Garcon, R. Madar, C. Bernard

Institutions: Institut polytechnique de Grenoble, Centre National de la Recherche Scientifique, Université Joseph Fourier, Laboratoire des Matériaux et du Génie Physique

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2007165408

FWCI: 5.593

Cites: 1

Cited by: 79

Related to: 10