Author

Chih‐Hang Tung

Observed names: C.-H. Tung, Chih Hang Tung, Chih-Hang Tung, Chih-hang Tung, Chih‐hang Tung, Tung Chih Hang, Tung Chih-Hang, Tung, C.S.

Institution: Taiwan Semiconductor Manufacturing Company (Taiwan)

Observed institutions: Agency for Science, Technology and Research, National Yang Ming Chiao Tung University, National University of Singapore, Singapore Science Park, Institute of Microelectronics, Institute of Microelectronics, Taiwan Semiconductor Manufacturing Company (Taiwan), Institute of Materials Research and Engineering, Industrial Technology Research Institute, Vanguard International Semiconductor (Taiwan)

OpenAlex ID: A5103435331

Dielectric breakdown mechanisms in gate oxides

2005 · Salvatore Lombardo, James H. Stathis, et al. · Journal of Applied Physics · 468

Silicon Nanowire Arrays for Label-Free Detection of DNA

2007 · Zhiqiang Gao, Ajay Agarwal, et al. · Analytical Chemistry · 437

Detection of MicroRNAs Using Target-Guided Formation of Conducting Polymer Nanowires in Nanogaps

2007 · Yi Fan, Xiantong Chen, et al. · Journal of the American Chemical Society · 220

Electroless Plating of Metals onto Carbon Nanotubes Activated by a Single-Step Activation Method

1999 · Li-Ming Ang, T. S. Andy Hor, et al. · Chemistry of Materials · 173

Lattice strain analysis of transistor structures with silicon–germanium and silicon–carbon source∕drain stressors

2005 · Kah-Wee Ang, King-Jien Chui, et al. · Applied Physics Letters · 117

Percolation path and dielectric-breakdown-induced-epitaxy evolution during ultrathin gate dielectric breakdown transient

2003 · Chih Hang Tung, Kin Leong Pey, et al. · Applied Physics Letters · 107

Aluminum oxynitride interfacial passivation layer for high-permittivity gate dielectric stack on gallium arsenide

2006 · Ming Zhu, Chih-Hang Tung, et al. · Applied Physics Letters · 50

In Situ Surface Passivation and CMOS-Compatible Palladium–Germanium Contacts for Surface-Channel Gallium Arsenide MOSFETs

2008 · Hock-Chun Chin, Ming Zhu, et al. · IEEE Electron Device Letters · 41

Mechanism and Prevention of Spontaneous Tin Whisker Growth

2005 · King-Ning Tu, Jong-ook Suh, et al. · MATERIALS TRANSACTIONS · 41

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Strained n-Channel FinFETs Featuring In Situ Doped Silicon–Carbon $(\hbox{Si}_{1 - y}\hbox{C}_{y})$ Source and Drain Stressors With High Carbon Content

2008 · Tsung-Yang Liow, Kian-Ming Tan, et al. · IEEE Transactions on Electron Devices · 39

Strained ${\rm n}$-MOSFET With Embedded Source/Drain Stressors and Strain-Transfer Structure (STS) for Enhanced Transistor Performance

2008 · Kah-Wee Ang, Jianqiang Lin, et al. · IEEE Transactions on Electron Devices · 35

Strained n-Channel Transistors With Silicon Source and Drain Regions and Embedded Silicon/Germanium as Strain-Transfer Structure

2007 · Kah-Wee Ang, Chih-Hang Tung, et al. · IEEE Electron Device Letters · 31

Electromigration in copper damascene interconnects: reservoir effects and failure analysis

2004 · Wei Shao, A.V. Vairagar, et al. · Surface and Coatings Technology · 31

The effect of anodizing temperature on anodic oxide formed on pure Al thin films

1995 · Re-Long Chiu, Peng-Heng Chang, et al. · Thin Solid Films · 31

Strained p-Channel FinFETs With Extended $\Pi$-Shaped Silicon–Germanium Source and Drain Stressors

2007 · Kian-Ming Tan, Tsung-Yang Liow, et al. · IEEE Electron Device Letters · 30

Thin body silicon-on-insulator N-MOSFET with silicon-carbon source/drain regions for performance enhancement

2006 · Kah-Wee Ang, King-Jien Chui, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 30

Investigation of silicon-germanium fins fabricated using germanium condensation on vertical compliant structures

2005 · Tsung-Yang Liow, Kian-Ming Tan, et al. · Applied Physics Letters · 28

Quantum Size Effects on Dielectric Constants and Optical Absorption of Ultrathin Silicon Films

2008 · Gang Zhang, Ming-Bin Yu, et al. · IEEE Electron Device Letters · 27

Direct Detection of Nucleic Acids by Tagging Phosphates on Their Backbones with Conductive Nanoparticles

2007 · Yi Fan, Xiantong Chen, et al. · Angewandte Chemie International Edition · 27

Performance Enhancement in Uniaxial Strained Silicon-on-Insulator N-MOSFETs Featuring Silicon–Carbon Source/Drain Regions

2007 · Kah-Wee Ang, King-Jien Chui, et al. · IEEE Transactions on Electron Devices · 26

Al2 O 3 Films Formed by Anodic Oxidation of Al‐1 Weight Percent Si‐0.5 Weight Percent Cu Films

1995 · Re‐Long Chiu, Peng‐Heng Chang, et al. · Journal of The Electrochemical Society · 26

Ultra High Density Low Temperature SoIC with Sub-0.5 μm Bond Pitch

2023 · Han-Jong Chia, Shih-Peng Tai, et al. · IEEE Electronic Components and Technology Conference (ECTC) · 25

Electromigration immortality of purely intermetallic micro -bump for 3D integration

2015 · Hsiao-Yun Chen, Chih-Hang Tung, et al. · IEEE Electronic Components and Technology Conference (ECTC) · 25

Dielectric-breakdown-induced epitaxy: a universal breakdown defect in ultrathin gate dielectrics

2005 · T.A.L. Selvarajoo, R. Ranjan, et al. · IEEE Transactions on Device and Materials Reliability · 25

N-Channel (110)-Sidewall Strained FinFETs With Silicon–Carbon Source and Drain Stressors and Tensile Capping Layer

2007 · Tsung-Yang Liow, Kian-Ming Tan, et al. · IEEE Electron Device Letters · 24

Works count: 116

Citation count: 2,687

H-index: 24

I10-index: 50