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James W. Liang
Observed names:
J. Liang,
James Liang
Institution:
United Microelectronics (Taiwan)
Observed institution:
United Microelectronics (Taiwan)
OpenAlex ID:
A5109971996
Effect of multiple via layout on electromigration performance and current density distribution in copper interconnect
2009
·
Mingte Lin
, Nick Jou
, et al.
·
IEEE International Reliability Physics Symposium proceedings
·
11
Degradation and failure analysis of Polysilicon Resistor connecting with Tungsten contact and Copper line
2011
·
Clement Huang
, Mingte Lin
, et al.
·
IEEE International Reliability Physics Symposium proceedings
·
7
New voltage ramp dielectric breakdown methodology based on square root E model for Cu/low-k interconnect reliability
2010
·
Mingte Lin
, James W. Liang
, et al.
·
IEEE International Reliability Physics Symposium proceedings
·
6
Polarity Dependence of the Conduction Mechanism in Interlevel Low-$k$ Dielectrics
2012
·
Mingte Lin
, James Liang
, et al.
·
IEEE Electron Device Letters
·
5
Sputtering parameters affecting the corrosion resistance of CoCrPtTa thin film media
2000
·
Changdar Tsai
, James Liang
, et al.
·
Journal of Magnetism and Magnetic Materials
·
4
Polarity Dependence on Electrical Properties of Low-k Dielectric in Copper Interconnect Structures
2015
·
M. Lin
, J. Liang
, et al.
·
International Conference on Solid State Devices and Materials (SSDM)
·
3
Diffusion ability of Stress Induced Voiding in advanced BEOL copper process
2012
·
Clement Huang
, James W. Liang
, et al.
·
IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)
·
3
Upstream electromigration study on multiple via structures in copper interconnect
2009
·
Mingte Lin
, Nick Jou
, et al.
·
IEEE International Interconnect Technology Conference (IITC)
·
3
The observation of mobile ion of 40nm node by Triangular Voltage Sweep
2014
·
Clement Huang
, James W. Liang
, et al.
·
IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)
·
2
Electrical properties of low-k dielectric in copper interconnect structures
2013
·
Mingte Lin
, J. Liang
, et al.
·
IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)
·
1
Polarity dependence of the conduction mechanism in inter-level low-k dielectrics
2012
·
Mingte Lin
, James W. Liang
, et al.
·
IEEE International Reliability Physics Symposium proceedings
·
1
Effect of multiple via structure on upstream electromigration in copper interconnect
2009
·
Mingte Lin
, Nick Jou
, et al.
·
IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)
·
1
Experiments and Simulation of Stress Induced Voiding Dependence on Upper Metal Cap Layer in Cu/Low-k Interconnects
2009
·
Mingte Lin
, James W. Liang
, et al.
·
Japanese Journal of Applied Physics
·
1
PDF
Stress Characterization for Stress-Induced Voiding in Cu/Low K Interconnects with Geometry and Upper Cap Layer Dependences
2008
·
Mingte Lin
, James W. Liang
, et al.
·
IEEE International Integrated Reliability Workshop final report
·
1
General estimation of Stress Induced Voiding for vias connected to large Cu plate
2011
·
Clement Huang
, James W. Liang
, et al.
·
IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)
Stress Characterization for Stress-Induced Voiding in Cu/Low K Interconnects with Geometry and Upper Cap Layer Dependences
2008
·
Mingte Lin
, James W. Liang
, et al.
·
IEEE International Integrated Reliability Workshop final report
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Works count:
16
Citation count:
49
H-index:
4
I10-index:
1
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