Get started
Author

Chang‐Cheng Chuo

Observed names: C. C. Chuo, C.-C Chuo, C.-C. Chuo, C.C Chuo, C.C. Chuo, Chang-Cheng Chuo, ChangCheng Chuo
Observed institutions: Pennsylvania State University, ITRI International, National Taiwan University, National Central University, San’an Optoelectronics (China), Industrial Technology Research Institute
OpenAlex ID: A5110004541
Structure and formation mechanism of V defects in multiple InGaN∕GaN quantum well layers
2006 · M. Shiojiri, C. C. Chuo, et al. · Journal of Applied Physics · 140
GaN electronics for high power, high temperature applications
2001 · S.J. Pearton, F. Ren, et al. · Materials Science and Engineering B · 109
Gd 2 O 3 / GaN metal-oxide-semiconductor field-effect transistor
2000 · J. W. Johnson, B. Luo, et al. · Applied Physics Letters · 99
High voltage GaN Schottky rectifiers
2000 · G.T. Dang, A.P. Zhang, et al. · IEEE Transactions on Electron Devices · 85
PDF
Interdiffusion of In and Ga in InGaN/GaN multiple quantum wells
2001 · Chang-Cheng Chuo, Chia-Ming Lee, et al. · Applied Physics Letters · 82
Comparison of GaN p-i-n and Schottky rectifier performance
2001 · A.P. Zhan, G.T. Dang, et al. · IEEE Transactions on Electron Devices · 75
Direct measurement of piezoelectric field in In0.23Ga0.77N/GaN multiple quantum wells by electrotransmission spectroscopy
2002 · C. Y. Lai, T. M. Hsu, et al. · Journal of Applied Physics · 61
Effects of thermal annealing on the luminescence and structural properties of high indium-content InGaN/GaN quantum wells
2000 · C.-C. Chuo, C.-M. Lee, et al. · Applied Physics Letters · 57
Temperature dependence of the radiative recombination zone in InGaN/GaN multiple quantum well light-emitting diodes
2001 · Chia-Ming Lee, Chang-Cheng Chuo, et al. · Journal of Applied Physics · 43
Improvement of near-ultraviolet InGaN-GaN light-emitting diodes with an AlGaN electron-blocking layer grown at low temperature
2003 · Ru-Chin Tu, Chun-Ju Tun, et al. · IEEE Photonics Technology Letters · 41
Schottky rectifiers fabricated on free-standing GaN substrates
2001 · J.W. Johnson, J.R. LaRoch, et al. · Solid-State Electronics · 38
AlGaN-based ultraviolet light-emitting diode on high-temperature annealed sputtered AlN template
2019 · Ruxue Ni, Chang-Cheng Chuo, et al. · Journal of Alloys and Compounds · 37
SiO[sub 2]/Gd[sub 2]O[sub 3]/GaN Metal Oxide Semiconductor Field Effect Transistors
2001 · J. W. Johnson, B. P. Gila, et al. · Journal of The Electrochemical Society · 36
PDF
Temperature dependence of GaN high breakdown voltage diode rectifiers
2000 · J.-I Chyi, C.-M Lee, et al. · Solid-State Electronics · 36
Surface and bulk leakage currents in high breakdown GaN rectifiers
2000 · F. Ren, A.P. Zhang, et al. · Solid-State Electronics · 31
Electroreflectance study on the polarization field in InGaN/AlInGaN multiple quantum wells
2004 · T. M. Hsu, C. Y. Lai, et al. · Applied Physics Letters · 29
Stimulated-emission spectra of high-indium-content InGaN/GaN multiple-quantum-well structures
2000 · Chii-Chang Chen, Hui-Wen Chuang, et al. · Applied Physics Letters · 28
Ultra-High-Density InGaN Quantum Dots Grown by Metalorganic Chemical Vapor Deposition
2004 · Ru-Chin Tu, Chun-Ju Tun, et al. · Japanese Journal of Applied Physics · 27
PDF
Device characteristics of the GaN/InGaN-doped channel HFETs
2001 · Yue-Ming Hsin, Hung-Tsao Hsu, et al. · IEEE Electron Device Letters · 26
High breakdown voltage Au/Pt/GaN Schottky diodes
2000 · G. T. Dang, A. P. Zhang, et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 26
Effect of composition inhomogeneity on the photoluminescence of InGaN/GaN multiple quantum wells upon thermal annealing
2002 · Chang-Cheng Chuo, Mao Nan Chang, et al. · Applied Physics Letters · 25
Effect of thermal annealing on high indium content InGaN/GaN single quantum well structures
2001 · Chii-Chang Chen, Kun-Long Hsieh, et al. · Journal of Applied Physics · 25
High-brightness inverted InGaN-GaN multiple-quantum-well light-emitting diodes without a transparent conductive layer
2003 · Chia-Ming Lee, Chang-Cheng Chuo, et al. · IEEE Electron Device Letters · 24
Growth and Device Performance of GaN Schottky Rectifiers
1999 · Jen-Inn Chyi, C. -M. Lee, et al. · MRS Internet Journal of Nitride Semiconductor Research · 23
PDF
Trenched epitaxial lateral overgrowth of fast coalesced a-plane GaN with low dislocation density
2006 · Te-Chung Wang, Tien-Chang Lu, et al. · Applied Physics Letters · 19
Works count: 63
Citation count: 1,433
H-index: 23
I10-index: 33
Year
Topic
Type