Year: 2004
Type: article
Abstract: This study examined how the duration of SiN x treatment on an underlying GaN layer affects the optical property, surface morphology and density of following InGaN quantum dots (QDs). InGaN QDs with extremely high density of near 3 × 10 11 cm -2 exhibited strong photoluminescence (PL) emission at room temperature (RT). Increasing the duration of the SiN x treatment of the underlying GaN layer, the RT-PL peak of the following InGaN nano-islands and QDs was found to be red-shifted from the violet to the greenish region, and the spectrum was broadened. Additionally, the average height of InGaN nano-islands and QDs increased with the duration of SiN x treatment, explaining the redshift of the RT-PL peak.
DOI: 10.1143/jjap.43.l264
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W2017790664