Author

Ying-Yang Teng

Institution: National Chung Shan Institute of Science and Technology

Observed institutions: National Chung Shan Institute of Science and Technology, National Central University

OpenAlex ID: A5110010990

Numerical simulation of oxygen transport during the CZ silicon crystal growth process

2010 · Jyh-Chen Chen, Ying-Yang Teng, et al. · Journal of Crystal Growth · 63

Three-dimensional numerical simulation of flow, thermal and oxygen distributions for a Czochralski silicon growth with in a transverse magnetic field

2014 · Jyh-Chen Chen, Pei-Yi Chiang, et al. · Journal of Crystal Growth · 36

Numerical investigation of the effect of heat shield shape on the oxygen impurity distribution at the crystal–melt interface during the process of Czochralski silicon crystal growth

2012 · Ying-Yang Teng, Jyh-Chen Chen, et al. · Journal of Crystal Growth · 26

Numerical investigation of oxygen impurity distribution during multicrystalline silicon crystal growth using a gas flow guidance device

2012 · Ying-Yang Teng, Jyh-Chen Chen, et al. · Journal of Crystal Growth · 22

Numerical Simulation of the Effect of Heater Position on the Oxygen Concentration in the CZ Silicon Crystal Growth Process

2012 · Ying-Yang Teng, Jyh-Chen Chen, et al. · International Journal of Photoenergy · 19

Erratum to: “The carbon distribution in multicrystalline silicon ingots grown using the directional solidification process” [J. Cryst. Growth 312 (2010) 1282–1290]

2010 · Ying-Yang Teng, Jyh-Chen Chen, et al. · Journal of Crystal Growth

Works count: 6

Citation count: 166

H-index: 5

I10-index: 5