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Anatoliy A. Padalitsa

Observed names: A A Padalitsa, A Padalitsa, A. A. Padalitsa, A. Padalitsa, A.A. Padalitsa, Padalitsa A. A., Padalitsa, A.A., А. А. Padalitsa, А. А. Падалица, А. Падалица, А.А. Падалица
OpenAlex ID: A5110030380
Investigation of indium segregation in InGaAs/(Al)GaAs quantum wells grown by MOCVD
2002 · A.A. Marmalyuk, O.I. Govorkov, et al. · Journal of Crystal Growth · 36
Advanced AlGaAs/GaAs Heterostructures Grown by MOVPE
2019 · Maxim A. Ladugin, Irina V. Yarotskaya, et al. · Crystals · 28
High-Power Laser Thyristors With High Injection Efficiency ($\lambda =890$ –910 nm)
2014 · Sergey O. Slipchenko, Aleksandr A. Podoskin, et al. · IEEE Photonics Technology Letters · 26
Semiconductor AlGaInAs/InP lasers with ultra-narrow waveguides
2017 · A A Marmalyuk, Yu L Ryaboshtan, et al. · Quantum Electronics · 23
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High-Power Pulse Semiconductor Laser-Thyristor Emitting at 900-nm Wavelength
2013 · Sergey O. Slipchenko, Aleksandr A. Podoskin, et al. · IEEE Photonics Technology Letters · 22
High-power laser diodes (λ = 808–850 nm) based on asymmetric separate-confinement heterostructures
2006 · A. Yu. Andreev, A. Yu. Leshko, et al. · Semiconductors · 22
On the control efficiency of a high-power laser thyristor emitting in the 890–910 nm spectral range
2014 · S. O. Slipchenko, A. A. Podoskin, et al. · Semiconductors · 19
A study of epitaxially stacked tunnel-junction semiconductor lasers grown by MOCVD
2010 · D. A. Vinokurov, V. P. Konyaev, et al. · Semiconductors · 19
Stimulated emission at transitions between Wannier–Stark ladders in semiconductor superlattices
2015 · A. A. Andronov, E. P. Dodin, et al. · Journal of Experimental and Theoretical Physics Letters · 18
Effect of the waveguide layer thickness on output characteristics of semiconductor lasers with emission wavelength from 1500 to 1600 nm
2018 · A A Marmalyuk, Yu L Ryaboshtan, et al. · Quantum Electronics · 15
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A study of nonlinear lasing dynamics of an InGaAs/AlGaAs/GaAs heterostructure power laser-thyristor emitting at 905 nm
2014 · S. O. Slipchenko, A. A. Podoskin, et al. · Journal of Applied Physics · 15
Amplification of terahertz radiation on transitions between Wannier — Stark ladders in weak-barrier superlattices
2010 · Aleksandr A Andronov, E P Dodin, et al. · Quantum Electronics · 13
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Transport in weak barrier superlattices and the problem of the terahertz Bloch oscillator
2003 · Aleksandr A Andronov, M N Drozdov, et al. · Physics-Uspekhi · 13
Comparison of carbon and zinc p-clad doped LP MOCVD grown InGaAs/AlGaAs low divergence high-power laser heterostructures
2003 · P.V. Bulaev, A.A. Marmalyuk, et al. · Journal of Crystal Growth · 12
High-power 850–870-nm pulsed lasers based on heterostructures with narrow and wide waveguides
2013 · M A Ladugin, Yu P Koval', et al. · Quantum Electronics · 11
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Research of acceptor impurity thermal activation in GaN: Mg epitaxial layers
2016 · Aleksandr V. Mazalov, Damir R. Sabitov, et al. · Modern Electronic Materials · 10
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High-power laser diodes based on triple integrated InGaAs/AlGaAs/GaAs structures emitting at 0.9 μm
2009 · Evgeniya I Davydova, M V Zverkov, et al. · Quantum Electronics · 10
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Laser diodes (λ=0.98 μm) with a narrow radiation pattern and low internal optical losses
2003 · S. O. Slipchenko, N. A. Pikhtin, et al. · Technical Physics Letters · 10
THz Stimulated Emission from Simple Superlattice in Positive Differential Conductivity Region
2018 · A. A. Andronov, A. V. Ikonnikov, et al. · Semiconductors · 9
Laser diode bars based on AlGaAs/GaAs quantum-well heterostructures with an efficiency up to 70%
2017 · M A Ladugin, A A Marmalyuk, et al. · Quantum Electronics · 9
Laser diode arrays based on AlGaAs/GaAs quantum-well heterostructures with an efficiency up to 62%
2017 · M A Ladugin, A A Marmalyuk, et al. · Quantum Electronics · 8
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High-power lasers (γ = 808 nm) based on the AlGaAs/GaAs heterostructures of separate confinement
2009 · A. Yu. Andreev, S. A. Zorina, et al. · Semiconductors · 8
Semiconductor AlGaInAs/InP lasers (λ = 1450 – 1500 nm) with a strongly asymmetric waveguide
2021 · N.A. Volkov, A.Yu. Andreev, et al. · Quantum Electronics · 7
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Pulsed electron-beam-pumped laser based on AlGaN/InGaN/GaN quantum-well heterostructure
2015 · N A Gamov, E V Zhdanova, et al. · Quantum Electronics · 7
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Temperature dependence of the threshold current density and external differential quantum efficiency of semiconductor lasers (λ = 900–920 nm)
2010 · M. A. Ladugin, A. V. Lyutetskiy, et al. · Semiconductors · 7
Works count: 98
Citation count: 530
H-index: 13
I10-index: 18
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