Work

Pulsed electron-beam-pumped laser based on AlGaN/InGaN/GaN quantum-well heterostructure

Year: 2015

Type: article

Abstract: The parameters of pulsed blue-violet ( at ) lasers based on an AlGaN/InGaN/GaN structure with five InGaN quantum wells and transverse electron-beam pumping are studied. At room temperature of the active element, the minimum electron energy was and the minimum threshold electron beam current density was at an electron energy of .

Source: Quantum Electronics

DOI: 10.1070/qe2015v045n07abeh015780

Authors: N A Gamov, E V Zhdanova, M M Zverev, D V Peregudov, V B Studenov, A V Mazalov, V A Kureshov, D R Sabitov, A A Padalitsa, A A Marmalyuk

Institutions: MIREA - Russian Technological University, Polyus Research Institute of M.F.Stelmakh (Russia), National Research Nuclear University MEPhI

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: bronze

Funder: Russian Foundation for Basic Research

OpenAlex ID: W2530720409

FWCI: 0.282

Cites: 7

Cited by: 7

Related to: 10