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Ch. Starck

Metamorphic DBR and tunnel-junction injection. A CW RT monolithic long-wavelength VCSEL
1999 · J. Boucart, C. Starck, et al. · IEEE Journal of Selected Topics in Quantum Electronics · 109
Lateral modulations in zero-net-strained GaInAsP multilayers grown by gas source molecular-beam epitaxy
1993 · A. Ponchet, A. Rocher, et al. · Journal of Applied Physics · 89
1-mW CW-RT monolithic VCSEL at 1.55 μm
1999 · J. Boucart, C. Starck, et al. · IEEE Photonics Technology Letters · 80
GaAlAs/GaAs metamorphic Bragg mirror for long wavelengthVCSELs
1998 · L. Goldstein, C. Fortin, et al. · Electronics Letters · 46
Gas source molecular beam epitaxy of alternated tensile / compressive strained GaInAsP multiple quantum wells emitting at 1.5 μm
1993 · J.-Y. Emery, C. Starck, et al. · Journal of Crystal Growth · 25
Very narrow-linewidth (70 kHz) 1.55 μm strained MQW DFB lasers
1992 · H. Bissessur, C. Starck, et al. · Electronics Letters · 23
Direct measurement of lateral elastic modulations in a zero-net strained GaInAsP/InP multilayer
1995 · A. Ponchet, A. Rocher, et al. · Journal of Applied Physics · 21
Strained quaternary GaInAsP quantum well lasee emitting at 1.5 μm grown by gas source molecular beam epitaxy
1992 · C. Starck, J.-Y. Emery, et al. · Journal of Crystal Growth · 18
RT pulsed operation of metamorphic VCSEL at 1.55µm
1998 · J. Boucart, C. Starck, et al. · Electronics Letters · 17
High FM bandwidth of DBR laser including butt-jointedelectro-optical wavelengthtuning sections
1994 · J. Langanay, E. Gaumont-Goarin, et al. · Electronics Letters · 15
Energy gaps in strained In1−x Gax As/ In1−y Gay Asz P1−z quantum wells grown on (001) InP
1995 · R. Weihofen, G. Weiser, et al. · Physical review. B, Condensed matter · 13
Low spectral chirp and large electroabsorption in a strained InGaAsP/InGaAsP multiple quantum well modulator
1993 · J. Langanay, C. Starck, et al. · Applied Physics Letters · 11
Effective masses in In1−x Gax As superlattices derived from Franz-Keldysh oscillations
1995 · B. Schlichtherle, G. Weiser, et al. · Physical review. B, Condensed matter · 10
Gradual degradation in 980 nm InGaAs/AlGaAs pump lasers
2002 · M. Bettiati, C. Starck, et al. · Materials Science and Engineering B · 9
Optoelectronic devices by gas source molecular beam epitaxy
1992 · L. Goldstein, C. Starck, et al. · Journal of Crystal Growth · 8
High temperature (Ga)InAsP/high band gap GaInAsP barriers 1.3 μm SL-MQW lasers grown by gas source MBE
1997 · Ph. Pagnod-Rossiaux, F. Gaborit, et al. · Journal of Crystal Growth · 7
Buried heterostructure laser fabricated using three-step gas source molecular beam epitaxy
1991 · J.-L. Liévin, D. Bonnevie, et al. · Applied Physics Letters · 6
Theoretical threshold lowering of compressively strained InGaAs/InGaAsP and GainAsP/GainAsP quantum-well lasers
1992 · J. Barrau, B. Brousseau, et al. · Electronics Letters · 5
Undercut ridge structures: A novel approach to 1.3/1.55 µm vertical-cavity lasers designed for continuous-wave operation
1998 · P. Salet, J. Jacquet, et al. · IEE Proceedings - Optoelectronics · 4
Well-size dependence of electro-optic effects in GaInAsP/InP quantum wells grown by GSMBE
1992 · C. Starck, F. Mollot, et al. · Journal of Crystal Growth · 4
Stark effect and Wannier-Stark localization in InGaAs quantum wells
2003 · G. Weiser, R. Weihofen, et al. · IEEE/LEOS Summer Topical Meetings · 3
Lateral thickness modulations in alternate tensile—compressive strained GaInAsP multilayers grown by gas source molecular beam epitaxy
1993 · A. Ponchet, A. Rocher, et al. · Materials Science and Engineering B · 3
1.3µm Low Threshold Distributed Feedback Lasers For High Bit-Rate Applications
1986 · C. Artigue, Y. Louis, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 3
High reliability level demonstrated on 980nm laser diode
2003 · J. Van de Casteele, D. Laffitte, et al. · Microelectronics Reliability · 2
Implantation optimization for 1.55 μm VCSEL
2003 · J. Boucart, E. Derouin, et al. · Conference proceedings. ... International Conference on Indium Phosphide and Related Materials · 2
Works count: 49
Citation count: 546
H-index: 11
I10-index: 13
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