Work

Strained quaternary GaInAsP quantum well lasee emitting at 1.5 μm grown by gas source molecular beam epitaxy

Year: 1992

Type: article

Source: Journal of Crystal Growth

DOI: 10.1016/0022-0248(92)90387-x

Authors: C. Starck, J.-Y. Emery, R.J. Simes, M. Matabon, L. Goldstein, J. Barrau

Institutions: Centre National de la Recherche Scientifique, Institut National des Sciences Appliquées de Toulouse

Language: English

Topic: Semiconductor Lasers and Optical Devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2007365350

FWCI: 5.099

Cites: 7

Cited by: 18

Related to: 10