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Th. Grabolla

Observed names: T Grabolla, T. Grabolla
OpenAlex ID: A5110096783
SiGe HBT technology with fT/fmax of 300GHz/500GHz and 2.0 ps CML gate delay
2010 · B. Heinemann, R. Barth, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 180
SiGe HBT with fx/fmax of 505 GHz/720 GHz
2016 · B. Heinemann, H. Rucker, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 177
Novel collector design for high-speed SiGe:C HBTs
2003 · B. Heinemann, H. Rucker, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 110
Influence of plasma treatment on SiO2/Si and Si3N4/Si substrates for large-scale transfer of graphene
2021 · R. Lukose, M. Lisker, et al. · Scientific Reports · 76
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A 0.13µm SiGe BiCMOS technology featuring fT/fmax of 240/330 GHz and gate delays below 3 ps
2009 · H. Rucker, B. Heinemann, et al. · IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) · 72
A low-parasitic collector construction for high-speed SiGe:C HBTs
2005 · B. Heinemann, R. Barth, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 50
A flexible, low-cost, high performance SiGe:C BiCMOS process with a one-mask HBT module
2003 · D. Knoll, K.E. Ehwald, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 44
Vertical MOS technology with sub-0.1 µm channellengths
1995 · H. Gossner, F. Wittmann, et al. · Electronics Letters · 34
Monolithically Integrated 25Gbit/sec Receiver for 1.55μm in Photonic BiCMOS Technology
2014 · D. Knoll, S. Lischke, et al. · Optical Fiber Communication Conference · 33
A novel buried oxide isolation for monolithic RF inductors on silicon
2002 · H.B. Erzgraber, T. Grabolla, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 30
SiGe BiCMOS Technology with 3.0 ps Gate Delay
2007 · H. Rucker, O. Fursenko, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 28
Modular integration of high-performance SiGe:C HBTs in a deep submicron, epi-free CMOS process
2003 · K.E. Ehwald, D. Knolll, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 28
Selectively grown vertical Si- p MOS transistorwith short channel lengths
1996 · D. Behammer, L. Vescan, et al. · Electronics Letters · 26
A modular, low-cost SiGe:C BiCMOS process featuring high-f/sub T/ and high BV/sub CEO/ transistors
2004 · D. Knoll, B. Heinemann, et al. · IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) · 23
Selectively grown vertical Si MOS transistor with reduced overlap capacitances
1998 · D Klaes, J Moers, et al. · Thin Solid Films · 22
Key influence of the thermal history on process-induced defects in Czochralski silicon wafers
1997 · G Kissinger, D Gräf, et al. · Semiconductor Science and Technology · 19
Investigation of the Composition of the Si/SiO2Interface in Oxide Precipitates and Oxide Layers on Silicon by STEM/EELS
2017 · G. Kissinger, M. A. Schubert, et al. · ECS Journal of Solid State Science and Technology · 18
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Vertical p-MOSFETs with gate oxide deposition before selective epitaxial growth
1999 · J Moers, D Klaes, et al. · Solid-State Electronics · 17
Optimization of the channel doping profile of vertical sub-100 nm MOSFETs
1998 · F Kaesen, C Fink, et al. · Thin Solid Films · 15
Integration of high-performance SiGe:C HBTs with thin-film SOI CMOS
2005 · H. Rucker, B. Hemernann, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 14
Grown‐in Oxide Precipitate Nuclei in Czochralski Silicon Substrates and Their Role in Device Processing
1999 · G. Kissinger, T. Grabolla, et al. · Journal of The Electrochemical Society · 12
High-field stressing of LPCVD gate oxides
1997 · V. Ramgopal Rao, I. Eisele, et al. · IEEE Electron Device Letters · 12
A Low-Cost, High-Performance, High-Voltage Complementary BiCMOS Process
2006 · D. Knoll, B. Heinemann, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 8
Combination of optical measurement and precipitation theory to overcome the obstacles of detection limits
2006 · G. Kissinger, T. Müller, et al. · Materials Science in Semiconductor Processing · 7
HBT before CMOS, a new modular SiGe BiCMOS integration scheme
2002 · D. Knoll, H. Rucker, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 5
Works count: 51
Citation count: 1,114
H-index: 17
I10-index: 22
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