Author

K. Uomi

Observed names: K Uomi, K. UOMI, Kazuhisa UOMI, Kazuhisa Uomi, Kazuhisa Uomi Kazuhisa Uomi

Observed institutions: Hiroshima University, California Institute of Technology, Oclaro (Japan), Core Competence, Hitachi (Japan)

OpenAlex ID: A5110104039

GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance

1996 · Masahiko Kondow, Kazuhisa Uomi, et al. · Japanese Journal of Applied Physics · 1,385

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GaInNAs: a novel material for long-wavelength semiconductor lasers

1997 · M. Kondow, T. Kitatani, et al. · IEEE Journal of Selected Topics in Quantum Electronics · 531

Gas-Source Molecular Beam Epitaxy of GaNxAs1-x Using a N Radical as the N Source

1994 · Masahiko Kondow, Kazuhisa Uomi, et al. · Japanese Journal of Applied Physics · 351

1.3-μm continuous-wave lasing operation in GaInNAs quantum-well lasers

1998 · K. Nakahara, M. Kondow, et al. · IEEE Photonics Technology Letters · 217

InGaAs/InGaAsP MQW electroabsorption modulator integrated with a DFB laser fabricated by band-gap energy control selective area MOCVD

1993 · M. Aoki, M. Suzuki, et al. · IEEE Journal of Quantum Electronics · 179

GaInNAs-GaAs long-wavelength vertical-cavity surface-emitting laser diodes

1998 · M.C. Larson, M. Kondow, et al. · IEEE Photonics Technology Letters · 169

Novel structure MQW electroabsorption modulator/DFB-laser integrated device fabricated by selective area MOCVD growth

1991 · M. Aoki, H. Sano, et al. · Electronics Letters · 155

Modulation-Doped Multi-Quantum Well (MD-MQW) Lasers. I. Theory

1990 · Kazuhisa Uomi · Japanese Journal of Applied Physics · 119

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Extremely large N content (up to 10%) in GaNAs grown by gas-source molecular beam epitaxy

1996 · M. Kondow, K. Uomi, et al. · Journal of Crystal Growth · 118

Mechanism analysis of improved GaInNAs optical properties through thermal annealing

2000 · T. Kitatani, K. Nakahara, et al. · Journal of Crystal Growth · 106

A 1.3-µm GaInNAs/GaAs Single-Quantum-Well Laser Diode with a High Characteristic Temperature over 200 K

2000 · Takeshi Kitatani, Kouji Nakahara, et al. · Japanese Journal of Applied Physics · 96

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Gas-source MBE of GaInNAs for long-wavelength laser diodes

1998 · M Kondow, T Kitatani, et al. · Journal of Crystal Growth · 96

Ultrahigh relaxation oscillation frequency (up to 30 GHz) of highly p-doped GaAs/GaAlAs multiple quantum well lasers

1987 · K. Uomi, T. Mishima, et al. · Applied Physics Letters · 87

Analysis of Band Offset in GaNAs/GaAs by X-Ray Photoelectron Spectroscopy

1999 · Takeshi Kitatani, Masahiko Kondow, et al. · Japanese Journal of Applied Physics · 78

Corrugation-pitch modulated MQW-DFB lasers with narrow spectral linewidth

1991 · M. Okai, T. Tsuchiya, et al. · IEEE Journal of Quantum Electronics · 77

Oscillation wavelength and laser structure dependence of nonlinear damping effect in semiconductor lasers

1991 · K. Uomi, T. Tsuchiya, et al. · Applied Physics Letters · 67

Modulation-Doped Multi-Quantum Well (MD-MQW) Lasers. II. Experiment

1990 · Kazuhisa Uomi, Tomoyoshi Mishima, et al. · Japanese Journal of Applied Physics · 65

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Corrugation-pitch-modulated MQW-DFB laser with narrow spectral linewidth (170 kHz)

1990 · M. Okai, T. Tsuchiya, et al. · IEEE Photonics Technology Letters · 62

High Relaxation Oscillation Frequency (beyond 10 GHz) of GaAlAs Multiquantum Well Lasers

1985 · Kazuhisa Uomi, Naoki Chinone, et al. · Japanese Journal of Applied Physics · 61

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Continuous-wave operation of long-wavelength GaInNAs/GaAsquantum well laser

1996 · K. Nakahara, K. Kondow, et al. · Electronics Letters · 56

Direct wafer bonding of III-V compound semiconductors for free-material and free-orientation integration

1997 · Y. Okuno, K. Uomi, et al. · IEEE Journal of Quantum Electronics · 55

High-extinction-ratio MQW electroabsorption-modulator integrated DFB laser fabricated by in-plane bandgap energy control technique

1992 · M. Aoki, M. Takahashi, et al. · IEEE Photonics Technology Letters · 50

Ultralow chirp and high-speed 1.55 mu m multiquantum well lambda /4-shifted DFB lasers

1990 · K. Uomi, S. Sasaki, et al. · IEEE Photonics Technology Letters · 49

Low threshold, room temperature pulsed operation of 1.5 /spl mu/m vertical-cavity surface-emitting lasers with an optimized multi-quantum well active layer

1994 · K. Uomi, S.J.B. Yoo, et al. · IEEE Photonics Technology Letters · 47

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InP-based reversed-mesa ridge-waveguide structure for high-performance long-wavelength laser diodes

1997 · M. Aoki, M. Komori, et al. · IEEE Journal of Selected Topics in Quantum Electronics · 45

Works count: 185

Citation count: 5,480

H-index: 31

I10-index: 67