Novel structure MQW electroabsorption modulator/DFB-laser integrated device fabricated by selective area MOCVD growth
Year: 1991
Type: article
Source: Electronics Letters
DOI: 10.1049/el:19911324
Authors: M. Aoki, H. Sano, M. Suzuki, M. Takahashi, K. Uomi, A. Takai
Institution: Hitachi (Japan)
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W1997521174