Author

G. W. Smith

Observed names: G W Smith, G.W. Smith, G.W.D Smith, GW Smith (15826274), Gilbert Smith, Gilbert W Smith A, Gilbert W. Smith

Observed institutions: University of Stuttgart, University of London, Qinetiq (United Kingdom), University of Exeter, University of Oxford, Imperial College London, University of Sheffield

OpenAlex ID: A5110126848

Biexciton creation and recombination in a GaAs quantum well

1992 · R. T. Phillips, D. J. Lovering, et al. · Physical review. B, Condensed matter · 134

Focused ion-beam milling for field-ion specimen preparation:

1998 · D.J Larson, D.T Foord, et al. · Ultramicroscopy · 99

Electronic processes in double-barrier resonant-tunneling structures studied by photoluminescence spectroscopy in zero and finite magnetic fields

1990 · M. S. Skolnick, D. G. Hayes, et al. · Physical review. B, Condensed matter · 81

Novel 1×N and N×N integrated optical switches using self-imaging multimode GaAs/AlGaAs waveguides

1994 · R. M. Jenkins, J. M. Heaton, et al. · Applied Physics Letters · 77

Real-time laser-light scattering studies of surface topography development during GaAs MBE growth

1993 · G.W. Smith, A.J. Pidduck, et al. · Journal of Crystal Growth · 73

Surface topography changes during the growth of GaAs by molecular beam epitaxy

1991 · G. W. Smith, A. J. Pidduck, et al. · Applied Physics Letters · 68

Band anticrossing in GaNxSb1−x

2006 · P. H. Jefferson, T. D. Veal, et al. · Applied Physics Letters · 57

PDF

Band gap reduction in GaNSb alloys due to the anion mismatch

2005 · T. D. Veal, L. F. J. Piper, et al. · Applied Physics Letters · 54

PDF

In situ X-ray topography studies during the molecular beam epitaxy growth of InGaAs on (001) GaAs: effects of substrate dislocation distribution on strain relaxation

1995 · S J Barnett, A M Keir, et al. · Journal of Physics D Applied Physics · 53

PDF

Excitation mechanisms of photoluminescence in double-barrier resonant-tunneling structures

1990 · M. S. Skolnick, P. E. Simmonds, et al. · Physical review. B, Condensed matter · 44

In-situ X-ray imaging of III-V strained-layer relaxation processes

1995 · C.R. Whitehouse, A.G. Cullis, et al. · Journal of Crystal Growth · 39

Optimization of deep-etched, single-mode GaAs-AlGaAs optical waveguides using controlled leakage into the substrate

1999 · J.M. Heaton, M.M. Bourke, et al. · Journal of Lightwave Technology · 36

16-channel (1- to 16-GHz) microwave spectrum analyzer device based on a phased array of GaAs/AlGaAs electro-optic waveguide delay lines

1998 · John M. Heaton, Chris D. Watson, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 35

Wannier-Stark localization ofXand Γ states in GaAs-AlAs short-period superlattices

1990 · D. M. Whittaker, M. S. Skolnick, et al. · Physical review. B, Condensed matter · 34

Photoluminescence excitation spectroscopy on intermixed GaAs/AlGaAs quantum wires

1993 · F. E. Prins, G. Lehr, et al. · Applied Physics Letters · 33

Exciton binding energies in shallow GaAs- Aly Ga1−y As quantum wells

1994 · P. E. Simmonds, M. J. Birkett, et al. · Physical review. B, Condensed matter · 27

Non-local aspects of breakdown in pin diodes

1995 · S Millidge, D C Herbert, et al. · Semiconductor Science and Technology · 26

Stark-ladder behavior of theXlevels in a type-II GaAs/AlAs superlattice measured using electroreflectance spectroscopy

1990 · A. J. Shields, P. C. Klipstein, et al. · Physical review. B, Condensed matter · 26

1993 · D. G. Austing, P. C. Klipstein, et al. · Physical review. B, Condensed matter · 25

Optical properties of wire and dot structures for photonic applications

1992 · H. Schweizer, G. Lehr, et al. · Superlattices and Microstructures · 21

Induced absorption spectroscopic determination of exciton binding energies in type-II GaAs/AlAs superlattices

1990 · C. C. Hodge, C. C. Phillips, et al. · Physical review. B, Condensed matter · 21

Dilute antimonide nitrides for very long wavelength infrared applications

2006 · Tim Ashley, Louise Buckle, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 17

Photoluminescence spectroscopy in GaAs/AlAs superlattices as a function of temperature and pressure: The influence of sample quality

1991 · I. L. Spain, M. S. Skolnick, et al. · Physical review. B, Condensed matter · 17

In-situ direct measurement of activation energies for the generation of misfit dislocations in the InGaAs/GaAs (001) system

1998 · G. Lacey, C.R. Whitehouse, et al. · Applied Surface Science · 16

GaAs/AlGaAs quantum dots by implantation induced intermixing

1993 · F. E. Prins, G. Lehr, et al. · Applied Physics Letters · 16

Works count: 80

Citation count: 1,360

H-index: 21

I10-index: 32