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Yoshifumi Takanashi

Observed names: Y. Takanashi, Yoshifumi Takanashi Yoshifumi Takanashi
OpenAlex ID: A5110154583
The thermoelectric properties of bulk crystalline n- and p-type Mg2Si prepared by the vertical Bridgman method
2008 · Masayasu Akasaka, Tsutomu Iida, et al. · Journal of Applied Physics · 257
Characteristics of InAlAs/InGaAs high-electron-mobility transistors under illumination with modulated light
1999 · Y. Takanashi, K. Takahata, et al. · IEEE Transactions on Electron Devices · 120
Investigation of the TiN Gate Electrode With Tunable Work Function and Its Application for FinFET Fabrication
2006 · Yongxun Liu, Shinya Kijima, et al. · IEEE Transactions on Nanotechnology · 118
Thermoelectric Characteristics of a Commercialized Mg2Si Source Doped with Al, Bi, Ag, and Cu
2010 · Tatsuya Sakamoto, Tsutomu Iida, et al. · Journal of Electronic Materials · 112
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Non-wetting crystal growth of Mg2Si by vertical Bridgman method and thermoelectric characteristics
2007 · Masayasu Akasaka, Tsutomu Iida, et al. · Journal of Crystal Growth · 98
Heteroepitaxial growth and characterization of InP on Si substrates
1990 · Mitsuru Sugo, Yoshifumi Takanashi, et al. · Journal of Applied Physics · 78
Electronic and optical properties of bulk crystals of semiconducting orthorhombic BaSi2 prepared by the vertical Bridgman method
2006 · Shingo Kishino, Tomohiro Imai, et al. · Journal of Alloys and Compounds · 67
Required Donor Concentration of Epitaxial Layers for Efficient InGaAsP Avalanche Photodiodes
1980 · Yoshifumi Takanashi, Minoru Kawashima, et al. · Japanese Journal of Applied Physics · 62
Thermoelectric Behavior of Sb- and Al-Doped n-Type Mg2Si Device Under Large Temperature Differences
2011 · Tatsuya Sakamoto, Tsutomu Iida, et al. · Journal of Electronic Materials · 61
Power Generation Characteristics of Mg2Si Uni-Leg Thermoelectric Generator
2012 · T. Nemoto, T. Iida, et al. · Journal of Electronic Materials · 47
Composition dependent thermoelectric properties of sintered Mg2Si1−Ge (x= 0 to 1) initiated from a melt-grown polycrystalline source
2007 · Masayasu Akasaka, Tsutomu Iida, et al. · Thin Solid Films · 42
Fabrication of large sintered pellets of Sb-doped n-type Mg2Si using a plasma activated sintering method
2012 · Yusuke Hayatsu, Tsutomu Iida, et al. · Journal of Solid State Chemistry · 39
Characteristics of InAlAs/InGaAs high electron mobility transistors under 1.3-μm laser illumination
1998 · Y. Takanashi, K. Takahata, et al. · IEEE Electron Device Letters · 37
InGaAsP/InP Avalanche Photodiode
1978 · Yoshifumi Takanashi, Yoshiji Horikoshi · Japanese Journal of Applied Physics · 36
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Selection and Evaluation of Thermal Interface Materials for Reduction of the Thermal Contact Resistance of Thermoelectric Generators
2014 · Tatsuya Sakamoto, Tsutomu Iida, et al. · Journal of Electronic Materials · 34
Thermoelectric properties and power generation characteristics of sintered undoped n-type Mg2Si
2011 · Tatsuya Sakamoto, Tsutomu Iida, et al. · Thin Solid Films · 26
Observation of deep levels in undoped GaSb grown by molecular beam epitaxy
1993 · Eiichi Kuramochi, Naoto Kondo, et al. · Applied Physics Letters · 25
Temperature Dependence of Ionization Coefficients for InP and 1.3 µm InGaAsP Avalanche Photodiodes
1981 · Yoshifumi Takanashi, Yoshiji Horikoshi · Japanese Journal of Applied Physics · 25
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Effect of hot-electron injection of high-frequency characteristics of abrupt In/sub 0.52/(Ga/sub 1-x/Al/sub x/)/sub 0.48/As/InGaAs HBT's
1992 · H. Fukano, H. Nakajima, et al. · IEEE Transactions on Electron Devices · 24
Characteristics of a Pin–Fin Structure Thermoelectric Uni-Leg Device Using a Commercial n-Type Mg2Si Source
2010 · Takashi Nemoto, Tsutomu Iida, et al. · Journal of Electronic Materials · 23
High-speed InP-InGaAs heterojunction phototransistors employing a nonalloyed electrode metal as a reflector
1994 · H. Fukano, Y. Takanashi, et al. · IEEE Journal of Quantum Electronics · 23
Improvement in the Durability and Heat Conduction of uni-leg Thermoelectric Modules Using n-type Mg2Si Legs
2013 · Takashi Nemoto, Tsutomu Iida, et al. · Journal of Electronic Materials · 20
High-speed InAlAs/InGaAs heterojunction bipolar transistors
1988 · H. Fukano, Y. Kawamura, et al. · IEEE Electron Device Letters · 20
AlGaAs/GaAs 2-DEG FET's fabricated from MO-CVD Wafers
1985 · Y. Takanashi, N. Kobayashi · IEEE Electron Device Letters · 20
Calcination- and Etching-Free Photolithography of Inorganic Phosphor Films Consisting of Rare Earth Ion Doped Nanoparticles on Plastic Sheets
2011 · Satoshi Watanabe, Hiroshi Hyodo, et al. · Advanced Functional Materials · 18
Works count: 116
Citation count: 1,870
H-index: 21
I10-index: 43
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