Work

Observation of deep levels in undoped GaSb grown by molecular beam epitaxy

Year: 1993

Type: article

Source: Applied Physics Letters

DOI: 10.1063/1.110413

Authors: Eiichi Kuramochi, Naoto Kondo, Yoshifumi Takanashi, Masatomo Fujimoto

Institution: NTT (Japan)

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W1997880902

FWCI: 0.639

Cites: 12

Cited by: 25

Related to: 10