Author

S. Decoutere

Observed name: S Decoutere

Institution: IMEC

Observed institutions: IMEC, KU Leuven

OpenAlex ID: A5110165443

A 0.16pJ/Conversion-Step 2.5mW 1.25GS/s 4b ADC in a 90nm Digital CMOS Process

2006 · G. Van der Plas, S. Decoutere, et al. · Digest of technical papers/Digest of technical papers - IEEE International Solid-State Circuits Conference · 229

A 5-GHz fully integrated ESD-protected low-noise amplifier in 90-nm RF CMOS

2005 · D. Linten, S. Thijs, et al. · IEEE Journal of Solid-State Circuits · 150

Low-power 5 GHz LNA and VCO in 90 nm RF CMOS

2004 · D. Linten, L. Aspemyr, et al. · Symposium on VLSI Circuits · 86

SiGe HBTs for application in BiCMOS technology: I. Stability, reliability and material parameters

2001 · S C Jain, S Decoutere, et al. · Semiconductor Science and Technology · 33

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Determination of the proximity parameters in electron beam lithography using doughnut-structures

1986 · L. Stevens, R. Jonckheere, et al. · Microelectronic Engineering · 28

Perspective of RF design in future planar and FinFET CMOS

2008 · J. Borremans, B. Parvais, et al. · Digest of papers - IEEE Radio Frequency Integrated Circuits Symposium · 25

24 GHz LNA in 90nm RF-CMOS with high-Q above-IC inductors

2005 · O. Dupuis, Xiao Sun, et al. · European Solid-State Circuits Conference (ESSCIRC) · 24

Low-power voltage-controlled oscillators in 90-nm CMOS using high-quality thin-film postprocessed inductors

2005 · D. Linten, Xiao Sun, et al. · IEEE Journal of Solid-State Circuits · 24

A low-cost 90nm RF-CMOS platform for record RF circuit performance

2005 · W. Jeamsaksiri, D. Linten, et al. · Symposium on VLSI Technology · 22

Integration of a 90nm RF CMOS technology (200GHz f/sub max/ - 150GHz f/sub T/ NMOS) demonstrated on a 5GHz LNA

2004 · W. Jeamsaksiri, A. Mercha, et al. · Symposium on VLSI Technology · 20

RFCMOS ESD protection and reliability

2005 · M.I. Natarajan, D. Linten, et al. · IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) · 19

A 1 V 23 GHz Low-Noise Amplifier in 45 nm Planar Bulk-CMOS Technology With High-$Q$ Above-IC Inductors

2009 · Wen-Chieh Wang, Zue-Der Huang, et al. · IEEE Microwave and Wireless Components Letters · 18

Low-power low-noise highly ESD robust LNA, and VCO design using above-IC inductors

2006 · D. Linten, X. Sun, et al. · Custom Integrated Circuits Conference · 16

Design-driven optimisation of a 90 nm RF CMOS process by use of elevated source/drain

2004 · D. Linten, S. Thijs, et al. · IEEE Conference on Electrical Performance of Electronic Packaging and Systems (EPEPS) · 15

An integrated 5 GHz low-noise amplifier with 5.5 kv HBM ESD protection in 90 nm RF CMOS

2005 · D. Linten, S. Thijs, et al. · Symposium on VLSI Circuits · 13

A 5 GHz fully integrated ESD-protected low-noise amplifier in 90 nm RF CMOS

2004 · D. Linten, S. Thijs, et al. · European Solid-State Circuits Conference (ESSCIRC) · 13

A 0.35 μm SiGe BiCMOS process featuring a 80 GHz f/sub max/ HBT and integrated high-Q RF passive components

2002 · S. Decoutere, F. Vleugels, et al. · IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) · 13

RF ESD protection strategies - the design and performance trade-off challenges

2006 · Ph. Jansen, S. Thijs, et al. · Custom Integrated Circuits Conference · 10

A Novel Deep Trench Isolation Featuring Airgaps for a High-Speed 0.13μm SiGe:C BiCMOS Technology

2006 · L.j. Choi, X.p. Shi, et al. · International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA) · 9

Technologies for (sub-) 45nm Analog/RF CMOS ¿ Circuit Design Opportunities and Challenges

2006 · S. Decoutere, P. Wambacq, et al. · Custom Integrated Circuits Conference · 8

High-Q on-chip inductors using thin-film wafer level packaging technology demonstrated on a 90 nm RF-CMOS 5 GHz VCO

2005 · X. Sun, D. Linten, et al. · European Microwave Conference (EuMC) · 8

A 400¿W 4.7-to-6.4GHz VCO under an Above-IC Inductor in 45nm CMOS

2008 · J. Borremans, P. Wambacq, et al. · Digest of technical papers/Digest of technical papers - IEEE International Solid-State Circuits Conference · 7

Implementation of 6kV ESD Protection for a 17GHz LNA in 130nm SiGeC BiCMOS

2006 · D. Linten, M.I. Natarajan, et al. · IEEE International Conference on Semiconductor Electronics · 6

A 328 μW 5 GHz voltage-controlled oscillator in 90 nm CMOS with high-quality thin-film post-processed inductor

2004 · D. Linten, X. Sun, et al. · Custom Integrated Circuits Conference · 6

90nm RF CMOS technology for low-power 900MHz applications [amplifier example]

2004 · J. Ramos, A. Mercha, et al. · European Solid-State Circuits Conference (ESSCIRC) · 4

Works count: 43

Citation count: 825

H-index: 14

I10-index: 18