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Yoshihiko Yuba

Observed names: Y. Yuba, Yoshihiko YUBA, Yoshihiko Yuba Yoshihiko Yuba
OpenAlex ID: A5110170676
Characterization of ion beam etching induced defects in GaAs
1988 · Yoshihiko Yuba, Tomohiro Ishida, et al. · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 32
Nanostructure fabrication of InP by low energy ion beams
2003 · Yoshihiko Yuba, Sumiaki Hazama, et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 26
Induced Defects in GaAs Etched by Low Energy Ions in Electron Beam Excited Plasma (EBEP) System
1989 · Jin-Zhong Yu, Norio Masui, et al. · Japanese Journal of Applied Physics · 25
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Defects induced by focused ion beam implantation in GaAs
1988 · Hideto Miyake, Yoshihiko Yuba, et al. · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 25
Laser annealing of ohmic contacts on GaAs
1981 · A. H. Oraby, K. Murakami, et al. · Applied Physics Letters · 24
Ion Beam Etching of InP. I. Ar Ion Beam Etching and Fabrication of Grating for Integrated Optics
1983 · Yoshihiko Yuba, Kenji Gamo, et al. · Japanese Journal of Applied Physics · 22
Defect study in GaAs bombarded by low-energy focused ion beams
1988 · Kenji Gamo, Hideto Miyake, et al. · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 21
Hall Effect Measurements of Zn Implanted GaAs
1974 · Yoshihiko Yuba, Kenji Gamo, et al. · Japanese Journal of Applied Physics · 18
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Awaking of ferromagnetism in GaMnN through control of Mn valence
2007 · S. Sonoda, I. Tanaka, et al. · Applied Physics Letters · 16
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Deep levels induced by high-energy boron ion implantation into p-silicon
1992 · H. Sayama, M. Takai, et al. · Applied Physics Letters · 16
Distribution Profiles and Annealing Characteristics of Defects in GaAs Induced by Low-Energy FIB Irradiation
1988 · Hideto Miyake, Yoshihiko Yuba, et al. · Japanese Journal of Applied Physics · 15
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Ion Beam Etching of InP. II. Reactive Etching with Halogen-Based Source Gases
1983 · Yoshihiko Yuba, Kenji Gamo, et al. · Japanese Journal of Applied Physics · 15
Advanced laser-produced EUV light source for HVM with conversion efficiency of 5-7% and B-field mitigation of ions
2008 · K. Nishihara, A. Sunahara, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 14
Laser-irradiation effects on unencapsulated GaAs studied by capacitance spectroscopy
1979 · Yoshihiko Yuba, Kenji Gamo, et al. · Applied Physics Letters · 13
Pulse Laser Annealing Effects in Si-Implanted GaAs
1984 · Ahmed H. Oraby, Yoshihiko Yuba, et al. · Japanese Journal of Applied Physics · 11
Photoresist removal process by hydrogen radicals generated by W catalyst
2007 · M. Takata, K. Ogushi, et al. · Thin Solid Films · 10
Near-surface defects formed by MeV ion implantation into silicon
1993 · H. Sayama, A. Kinomura, et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 10
Magnetization process and resistance jumps in a submicron-scale cross-shaped Co wire
2000 · Takashi Kimura, Fujio Wakaya, et al. · Journal of Magnetism and Magnetic Materials · 9
Transport Properties of Coupled Electron Waveguides Buried in Heterostructure
1993 · Fujio Wakaya, Yoshihiko Yuba, et al. · Japanese Journal of Applied Physics · 9
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Electron focusing effects in the in-plane gated structures
1992 · Fujio Wakaya, Yukihiko Takagaki, et al. · Superlattices and Microstructures · 9
MBE growth of GaAs/AlAs QW structures on GaAs channeled substrates with submicron facets
1992 · S. Shimomura, S. Ohkubo, et al. · Surface Science · 9
Carrier profile of the Si-doped layer in GaAs fabricated by a low-energy focused ion beam/molecular beam epitaxy combined system
1999 · Junichi Yanagisawa, Takayuki Goto, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 8
Low-Energy Ion-Beam Irradiation Effects on Two-Dimensional Electron Gas in Modulation-Doped AlGaAs/GaAs Heterostructure
1991 · Masahiro Yamazawa, Toshiharu Matsumoto, et al. · Japanese Journal of Applied Physics · 8
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Phase Coherence Length in Planar Doped Thin GaAs Wires Fabricated by Ion Beam Etching
1990 · Hiroaki Taniguchi, Tasuku Nagoya, et al. · Japanese Journal of Applied Physics · 8
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Investigation of In Situ Process for GaAs/AlGaAs Buried Quantum Wires
1994 · Fujio Wakaya, Kazuhiro Umeda, et al. · Japanese Journal of Applied Physics · 7
Works count: 67
Citation count: 492
H-index: 13
I10-index: 17
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