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Author

Masanobu Shirakawa

Observed names: M. Shirakawa, 政信 白川
Institution: Toshiba (Japan)
OpenAlex ID: A5110191547
A 56-nm CMOS 99-${\hbox {mm}}^{2} $ 8-Gb Multi-Level NAND Flash Memory With 10-MB/s Program Throughput
2007 · Ken Takeuchi, Yasushi Kameda, et al. · IEEE Journal of Solid-State Circuits · 68
A 1.25-inch 60-frames/s 8.3-M-pixel digital-output CMOS image sensor
2005 · I. Takayanagi, M. Shirakawa, et al. · IEEE Journal of Solid-State Circuits · 59
A 56nm CMOS 99mm2 8Gb Multi-level NAND Flash Memory with 10MB/s Program Throughput
2006 · K. Takeuchi, Y. Kameda, et al. · Digest of technical papers/Digest of technical papers - IEEE International Solid-State Circuits Conference · 37
A 1 1/4 inch 8.3M pixel digital output CMOS APS for UDTV application
2003 · I. Takayanagi, M. Shirakawa, et al. · Digest of technical papers/Digest of technical papers - IEEE International Solid-State Circuits Conference · 32
A 120mm2 16Gb 4-MLC NAND Flash Memory with 43nm CMOS Technology
2008 · Kazushige Kanda, Masaru Koyanagi, et al. · Digest of technical papers/Digest of technical papers - IEEE International Solid-State Circuits Conference · 25
43nmCMOS技術を用いた120mm^2 16Gb多値NANDフラッシュメモリの開発
2008 · 大 中村, 和重 神田, et al. · 電子情報通信学会技術研究報告. ICD, 集積回路
99mm^2,10MB/secを実現する56nm 8Gb多値NANDフラッシュメモリ(新メモリ技術とシステムLSI)
2006 · 信 岩井, 健 竹内, et al. · 電子情報通信学会技術研究報告. ICD, 集積回路
99mm2,10MB/secを実現する56nm 8Gb多値NANDフラッシュメモリ
2006 · 信 岩井, 健 竹内, et al. · 電子情報通信学会技術研究報告. ICD, 集積回路
A 56nm CMOS 99mm2 8Gb Multi-level NAND Flash Memory with 10MB/s Program Throughput
2006 · Makoto Iwai, Ken Takeuchi, et al. · IEICE Technical Report; IEICE Tech. Rep.
for UDTV Application
2003 · Isao Takayanagi, M. Shirakawa, et al.
Works count: 10
Citation count: 221
H-index: 5
I10-index: 5
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