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Irina P. Nikitina
Observed names:
I. P. Nikitina,
Irina Nikitina
Institution:
Ioffe Institute
Observed institutions:
Texas Tech University,
Russian Academy of Sciences,
Newcastle University,
Ioffe Institute
OpenAlex ID:
A5110194800
Silicon Carbide and Related Materials 2006: ECSCRM 20006
2007
·
Nicholas G. Wright
, C. Mark Johnson
, et al.
·
Trans Tech Publications Ltd. eBooks
·
42
High Voltage Silicon Carbide Schottky Diodes with Single Zone Junction Termination Extension
2007
·
Konstantin Vassilevski
, Irina P. Nikitina
, et al.
·
Materials science forum
·
22
AlN Wafers Fabricated by Hydride Vapor Phase Epitaxy
2000
·
Andrey Nikolaev
, Irina Nikitina
, et al.
·
MRS Internet Journal of Nitride Semiconductor Research
·
17
PDF
High Temperature Operation of Silicon Carbide Schottky Diodes with Recoverable Avalanche Breakdown
2006
·
Konstantin Vassilevski
, Irina P. Nikitina
, et al.
·
Materials science forum
·
13
Growth of Few Layers Graphene on Silicon Carbide from Nickel Silicide Supersaturated with Carbon
2010
·
Konstantin Vassilevski
, Irina P. Nikitina
, et al.
·
Materials science forum
·
11
Structural and Morphological Characterization of Al/Ti-Based Ohmic Contacts on p-Type 4H-SiC Annealed Under Various Conditions
2000
·
Konstantin Vassilevski
, Konstantinos Zekentes
, et al.
·
Materials science forum
·
10
AlN Wafers Fabricated by Hydride Vapor Phase Epitaxy
1999
·
Andrey Nikolaev
, Irina Nikitina
, et al.
·
MRS Proceedings
·
10
4.6 kV, 10.5 mOhm×cm2 Nickel Silicide Schottky Diodes on Commercial 4H-SiC Epitaxial Wafers
2010
·
Konstantin Vassilevski
, Irina P. Nikitina
, et al.
·
Materials science forum
·
7
Structural, Electrical and Optical Properties of Bulk 4H and 6H p-Type SiC
2000
·
Evgenia V. Kalinina
, A.S. Zubrilov
, et al.
·
Materials science forum
·
7
Electrophysical and Optical Properties of 4H-SiC UV Detectors Irradiated with Electrons
2019
·
Evgenia V. Kalinina
, Alexander A. Lebedev
, et al.
·
Materials science forum
·
6
Silicon Carbide UV Based Photovoltaic for Hostile Environments
2009
·
Simon Barker
, Rupert C. Stevens
, et al.
·
Materials science forum
·
6
Comparison of graphene films grown on 6H-SiC and 4H-SiC substrates
2019
·
Sergey P. Lebedev
, Dmitry G. Amel’chuk
, et al.
·
Fullerenes Nanotubes and Carbon Nanostructures
·
5
Local Solid Phase Epitaxy of Few-Layer Graphene on Silicon Carbide
2012
·
Enrique Escobedo-Cousin
, Konstantin Vassilevski
, et al.
·
Materials science forum
·
4
Phase Inhomogeneity and Electrical Characteristics of Nickel Silicide Schottky Contacts Formed on 4H-SiC
2009
·
Irina P. Nikitina
, Konstantin Vassilevski
, et al.
·
Materials science forum
·
4
Silicon Carbide Vertical JFET Operating at High Temperature
2008
·
Konstantin Vassilevski
, Keith P. Hilton
, et al.
·
Materials science forum
·
4
Potential Benefits of Silicon Carbide Zener Diodes Used as Components of Intrinsically Safe Barriers
2007
·
P. Lark
, Konstantin Vassilevski
, et al.
·
Materials science forum
·
4
4H-SiC Layers Grown by Liquid Phase Epitaxy on 4H-SiC Off-Axis Substrates
2000
·
N.I. Kuznetsov
, A. Morozov
, et al.
·
Materials science forum
·
4
High Quality AlN and GaN Grown on Si(111) by Gas Source Molecular Beam Epitaxy with Ammonia
2000
·
Sergey A. Nikishin
, Nikolai N. Faleev
, et al.
·
MRS Internet Journal of Nitride Semiconductor Research
·
4
PDF
Crystal Structure and Optical Properties of Bulk GaN Crystals Grown from a Melt at Reduced Pressure
1998
·
V. Sukhoveyev
, V. Ivantsov
, et al.
·
Materials science forum
·
3
Silicon Carbide Vertical JFET with Self-Aligned Nickel Silicide Contacts
2011
·
Konstantin Vassilevski
, Irina P. Nikitina
, et al.
·
Materials science forum
·
2
3.3 kV Rated Silicon Carbide Schottky Diodes with Epitaxial Field Stop Ring
2011
·
Konstantin Vassilevski
, Irina P. Nikitina
, et al.
·
Materials science forum
·
2
Investigation of the Influence of Structural Defects on the PL Spectra in n-3C-SiC
2020
·
Lev V. Shakhov
, Alexander A. Lebedev
, et al.
·
Materials science forum
·
1
Effect of 3C-SiC Irradiation with 8 MeV Protons
2017
·
Alexander A. Lebedev
, Boris Ya. Ber
, et al.
·
Materials science forum
·
1
Free Standing AlN Single Crystal Grown on Pre-Patterned and In Situ Patterned 4H-SiC Substrates
2010
·
Gholam Reza Yazdi
, Konstantin Vassilevski
, et al.
·
Materials science forum
·
1
Silicon Carbide Static Induction Transistor with Implanted Buried Gate
2009
·
Konstantin Vassilevski
, Irina P. Nikitina
, et al.
·
Materials science forum
·
1
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Works count:
40
Citation count:
194
H-index:
7
I10-index:
7
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