Work

4H-SiC Layers Grown by Liquid Phase Epitaxy on 4H-SiC Off-Axis Substrates

Year: 2000

Type: article

Source: Materials science forum

DOI: 10.4028/www.scientific.net/msf.338-342.229

Authors: N.I. Kuznetsov, A. Morozov, D. Bauman, V. Ivantsov, V. Sukhoveyev, Irina P. Nikitina, A.S. Zubrilov, S.V. Rendakova, Vladimir Dmitriev, D. Hofman, György Vida

Institutions: Ioffe Institute, Newcastle University, Russian Academy of Sciences, Budapest University of Technology and Economics

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: hybrid

OpenAlex ID: W1992165704

FWCI: 1.666

Cites:

Cited by: 4

Related to: 10