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Author

M. Emam

Observed names: Emam, M., M Emam
Institution: UCLouvain
OpenAlex ID: A5111036923
Effect of parasitic elements on UTBB FD SOI MOSFETs RF figures of merit
2014 · M.K. Md Arshad, V. Kilchytska, et al. · Solid-State Electronics · 37
Small-signal analysis of high-performance p- and n-type SOI SB-MOSFETs with dopant segregation
2010 · C. Urban, M. Emam, et al. · Solid-State Electronics · 13
High-frequency performance of dopant-segregated NiSi S/D SOI SB-MOSFETs
2009 · C. Urban, M. Emam, et al. · European Solid-State Device Research Conference · 13
Body-Biasing Control on Zero-Temperature-Coefficient in Partially Depleted SOI MOSFET
2008 · M. El Kaamouchi, G. Dambrine, et al. · IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) · 11
High Temperature DC and RF Behavior of Partially Depleted SOI versus Deep n-Well Protected Bulk MOSFETs
2009 · M. Emam, D. Vanhoenacker-Janvier, et al. · IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) · 6
RF antenna switch using dynamic threshold SOI MOSFET
2011 · M Emam, J.-P Raskin, et al. · IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) · 5
DC and RF temperature behavior of deep submicron Graded Channel MOSFETs
2009 · M. Emam, A. Kumar, et al. · IEEE International SOI Conference (SOI) · 5
High Temperature Antenna Switches in 130 nm SOI Technology
2007 · M. Emam, M. El Kaamouchi, et al. · IEEE International SOI Conference (SOI) · 5
RF behavior of undoped channel ultra-thin body with ultra-thin BOX MOSFETs
2012 · M. K. Md Arshad, M. Emam, et al. · IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) · 4
Comparison between the behavior of submicron graded-channel SOI nMOSFETs with fully- and partially-depleted operations in a wide temperature range
2010 · M. de Souza, M. Emam, et al. · IEEE International SOI Conference (SOI) · 4
New RF intrinsic parameters extraction procedure for advanced MOS transistors
2010 · J. C. Tinoco, A. G. Martinez-Lopez, et al. · IEEE International Conference on Microelectronic Test Structures (ICMTS) · 4
Analog, RF and nonlinear behaviors of submicron graded channel partially depleted SOI MOSFETs
2009 · M. Emam, M. A. Pavanello, et al. · European Solid-State Device Research Conference · 4
High temperature RF behavior of SOI MOSFETs for low-power low-voltage applications
2008 · M. Emam, D. Vanhoenacker-Janvier, et al. · IEEE International SOI Conference (SOI) · 4
High temperature RF behavior of SOI MOSFET transistors for low power low voltage applications
2010 · M. Emam, D. Vanhoenacker-Janvier, et al. · IEEE International SOI Conference (SOI) · 3
Effect of gate oxide scaling on RF performance of SOI MOSFETs
2011 · M Emam, D Vanhoenacker-Janvier, et al. · IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) · 2
Silicon-on-insulator (SOI) metal oxide semiconductor field effect transistors (MOSFETs) for radio frequency (RF) and analogue applications
2014 · J.-P. Raskin, M. Emam · Elsevier eBooks · 1
Non-linear analysis of n-type Schottky-Barrier MOSFETs
2010 · J. C. Tinoco, C. Urban, et al. · IEEE International SOI Conference (SOI) · 1
Graded channel concept for improving RF noise of an industrial 0.15 µm SOI CMOS technology
2010 · Emam, M., Sakalas, P., et al. · HAL
Works count: 18
Citation count: 122
H-index: 5
I10-index: 4
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