Work

Effect of parasitic elements on UTBB FD SOI MOSFETs RF figures of merit

Year: 2014

Type: article

Source: Solid-State Electronics

DOI: 10.1016/j.sse.2014.04.027

Authors: M.K. Md Arshad, V. Kilchytska, M. Emam, F. Andrieu, D. Flandre, J.-P. Raskin

Institutions: Universiti Malaysia Perlis, UCLouvain, Commissariat à l'Énergie Atomique et aux Énergies Alternatives, CEA Grenoble

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2006508474

FWCI: 3.796

Cites: 59

Cited by: 37

Related to: 10