Author

J. E. Bower

Observed names: J. Bower, J. E. BOWER, J. Eric Bower, J. Eric. Bower, J.E. Bower, J.Eric Bower

Observed institutions: Northwestern University, AT&T (United States), Arthur D. Little (United States), Nokia (Finland), Saint Vincent's Catholic Medical Center, Alcatel-Lucent (United States), Alcatel-Lucent (France), University of California, Berkeley

OpenAlex ID: A5111334680

Collision induced dissociation of metal cluster ions: Bare aluminum clusters, Al+n (n=3–26)

1987 · Martin F. Jarrold, J. Eric Bower, et al. · The Journal of Chemical Physics · 234

Magnetic and Structural Properties of Single-Crystal Rare-Earth Gd-Y Superlattices

1985 · J. Kwo, E. M. Gyorgy, et al. · Physical Review Letters · 198

Mobilities of silicon cluster ions: The reactivity of silicon sausages and spheres

1992 · Martin F. Jarrold, J. Eric Bower · The Journal of Chemical Physics · 190

Structural Transitions in Size-Selected Germanium Cluster Ions

1994 · J. M. Hunter, J. L. Fye, et al. · Physical Review Letters · 168

A detailed study of the reactions between size selected aluminum cluster ions, Al+n (n=3–26), and oxygen

1987 · Martin F. Jarrold, J. Eric Bower · The Journal of Chemical Physics · 131

Chemistry of semiconductor clusters: A study of the reactions of size selected Si+n (n=3–24) with C2H4 using selected ion drift tube techniques

1989 · M. F. Jarrold, J. E. Bower, et al. · The Journal of Chemical Physics · 115

Photodissociation kinetics of aluminum cluster ions: Determination of cluster dissociation energies

1989 · Urmi Ray, Martin F. Jarrold, et al. · The Journal of Chemical Physics · 110

Optical transmission through double-layer metallic subwavelength slit arrays

2006 · H. B. Chan, Z. Marcet, et al. · Optics Letters · 96

The Vertical Replacement-Gate (VRG) MOSFET: a 50-nm vertical MOSFET with lithography-independent gate length

2003 · J.M. Hergenrother, D. Monroe, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 90

Collision-induced dissociation of silicon cluster ions

1988 · Martin F. Jarrold, J. Eric Bower · The Journal of Physical Chemistry · 86

Novel Ga2O3 (Ga2O3) passivation techniques to produce low Dit oxide-GaAs interfaces

1997 · M. Hong, J.P. Mannaerts, et al. · Journal of Crystal Growth · 72

Preparation and observation of Si10 clusters on a Au(001)-(5×20) surface

1989 · Y. Kuk, M. F. Jarrold, et al. · Physical review. B, Condensed matter · 67

Imaging nanostructures with coherent phonon pulses

2004 · B. C. Daly, N. C. R. Holme, et al. · Applied Physics Letters · 63

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Wavelength-selective 1×4 switch for 128 WDM channels at 50 GHz spacing

2003 · D.M. Marom, D.T. Neilson, et al. · Optical Fiber Communication Conference · 58

Mobilities of metal cluster ions: Aluminum and the electronic shell model

1993 · Martin F. Jarrold, J. Eric Bower · The Journal of Chemical Physics · 58

Chemisorption on size-selected metal clusters: activation barriers and chemical reactions for deuterium on aluminum cluster ions

1988 · Martin F. Jarrold, J. Eric. Bower · Journal of the American Chemical Society · 58

The reactions of mass selected aluminum cluster ions, Al+ n ( n =4–25), with oxygen

1986 · Martin F. Jarrold, J. Eric Bower · The Journal of Chemical Physics · 58

Properties of deposited size-selected clusters: Reactivity of deposited silicon clusters

1992 · J. Eric Bower, Martin F. Jarrold · The Journal of Chemical Physics · 49

Gate quality doped high K films for CMOS beyond 100 nm: 3-10 nm Al/sub 2/O/sub 3/ with low leakage and low interface states

2002 · L. Manchanda, W.H. Lee, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 44

Collision induced dissociation of aluminum cluster ions with chemisorbed oxygen, AlnO+m (n=3–26, m=1,2): Influence of electronic structure on stability

1987 · Martin F. Jarrold, J. Eric Bower · The Journal of Chemical Physics · 44

Photodissociation of metal cluster ions. Dissociation energies and optical spectroscopy

1990 · Martin F. Jarrold, Urmi Ray, et al. · Journal of the Chemical Society Faraday Transactions · 38

Growth of semiconductor/insulator structures: GaAs/fluoride/GaAs (001)

1985 · P. W. Sullivan, J. E. Bower, et al. · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 37

Delayed emission of hydrogen from ion bombardment of solid methane

1987 · W.L. Brown, G. Foti, et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 36

Photodissociation spectroscopy of aluminum clusters: Al3+-Al6+

1989 · U. Ray, M.F. Jarrold, et al. · Chemical Physics Letters · 33

Progress toward 10 nm CMOS devices

2002 · G. Timp, K.K. Bourdelle, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 31

Works count: 80

Citation count: 2,659

H-index: 27

I10-index: 48