Work

Novel Ga2O3 (Ga2O3) passivation techniques to produce low Dit oxide-GaAs interfaces

Year: 1997

Type: article

Source: Journal of Crystal Growth

DOI: 10.1016/s0022-0248(96)01202-x

Authors: M. Hong, J.P. Mannaerts, J.E. Bower, J. Kwo, M. Passlack, W.-Y. Hwang, L.W. Tu

Institution: Alcatel-Lucent (France)

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: Deutsche Forschungsgemeinschaft

OpenAlex ID: W1997128690

FWCI: 0.481

Cites: 16

Cited by: 72

Related to: 10