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Jacques Chevallier

Donor neutralization in GaAs(Si) by atomic hydrogen
1985 · J. Chevallier, W. C. Dautremont-Smith, et al. · Applied Physics Letters · 234
Hydrogenation of shallow-donor levels in GaAs
1986 · S. J. Pearton, W. C. Dautremont-Smith, et al. · Journal of Applied Physics · 175
Hydrogen In Crystalline Semiconductors
1988 · J Chevallier, M Aucouturier · Annual Review of Materials Science · 156
Shallow donors with high n-type electrical conductivity in homoepitaxial deuterated boron-doped diamond layers
2003 · Zéphirin Teukam, Jacques Chevallier, et al. · Nature Materials · 147
Hydrogen-boron interactions in p -type diamond
1998 · J. Chevallier, B. Theys, et al. · Physical review. B, Condensed matter · 135
Electroreflectance and Band Structure of GaxIn1−xP Alloys
1972 · C. Alibert, G. Bordure, et al. · Physical review. B, Solid state · 119
Passivation of deep level defects in molecular beam epitaxial GaAs by hydrogen plasma exposure
1986 · W. C. Dautremont-Smith, J. C. Nabity, et al. · Applied Physics Letters · 110
High-resolution infrared study of the neutralization of silicon donors in gallium arsenide
1988 · B. Pajot, R. C. Newman, et al. · Physical review. B, Condensed matter · 93
Local-environment effect on the nitrogen bound state in GaPxAs1−x alloys: Experiments and coherent-potential approximation theory
1980 · H. Mariette, J. Chevallier, et al. · Physical review. B, Condensed matter · 70
Raman detection of phonon-phonon coupling in GaxIn1−xP
1976 · R. Beserman, C. Hirlimann, et al. · Solid State Communications · 70
The passivation of Be acceptors in GaAs by exposure to a hydrogen plasma
1988 · P S Nandhra, R C Newman, et al. · Semiconductor Science and Technology · 64
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The n-type doping of diamond: Present status and pending questions
2007 · M.-A. Pinault, J. Barjon, et al. · Physica B Condensed Matter · 62
Impurity-to-band activation energy in phosphorus doped diamond
2013 · I. Stenger, M.-A. Pinault-Thaury, et al. · Journal of Applied Physics · 61
Electron mobility studies of the donor neutralization by atomic hydrogen in GaAs doped with silicon
1986 · A. Jalil, J. Chevallier, et al. · Journal of Applied Physics · 61
Shallow donors and D-X centers neutralization by atomic hydrogen in GaAlAs doped with silicon
1988 · R. Mostefaoui, J. Chevallier, et al. · Journal of Applied Physics · 57
Spectroscopic evidence for the hydrogen passivation of zinc acceptors in gallium arsenide
1987 · B Pajot, A Jalil, et al. · Semiconductor Science and Technology · 57
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Hydrogen-acceptor interactions in diamond
2001 · J. Chevallier, A. Lusson, et al. · Diamond and Related Materials · 56
n‐type CVD diamond doped with phosphorus using the MOCVD technology for dopant incorporation
2006 · T. Kociniewski, J. Barjon, et al. · physica status solidi (a) · 54
Deep hydrogen traps in heavily B-doped diamond
2003 · J. P. Goss, P. R. Briddon, et al. · Physical review. B, Condensed matter · 54
Hydrogen passivation of shallow acceptors in p-type InP
1989 · J Chevallier, A Jalil, et al. · Semiconductor Science and Technology · 54
Hydrogen in Monocrystalline CVD Boron Doped Diamond
1999 · J. Chevallier, D. Ballutaud, et al. · physica status solidi (a) · 52
Spectroscopic evidence for hydrogen-phosphorus pairing in zinc-doped InP containing hydrogen
1989 · B Pajot, J Chevallier, et al. · Semiconductor Science and Technology · 49
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Resistivity of boron doped diamond
2009 · J. Barjon, N. Habka, et al. · physica status solidi (RRL) - Rapid Research Letters · 48
Hydrogen diffusion and acceptor passivation in p-type GaAs
1993 · R. Rahbi, B. Pajot, et al. · Journal of Applied Physics · 48
Conduction band structure of GaInP
1977 · P. Merle, D. Auvergne, et al. · Physical review. B, Solid state · 48
Works count: 211
Citation count: 4,027
H-index: 36
I10-index: 94
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